Substrate Support Electrode Overlap for Tilt and Plasma Uniformity

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Solution Overview

Problem

Existing substrate supports face a trade-off between tilt controllability and uniformity of plasma density in the circumferential direction, where improving one aspect often deteriorates the other due to the configuration of electrodes, leading to suboptimal performance in plasma processing.

Innovation Solution

A substrate support design featuring a first bias electrode below the substrate support surface and a second bias electrode below the ring support surface, with overlapping regions outside the substrate support surface, allows for independent control of tilt and plasma density uniformity by minimizing electromagnetic interference and optimizing the crosstalk region.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If the first bias electrode and second bias electrode are positioned to face each other within the substrate region, then tilt controllability is improved, but uniformity of plasma density in the circumferential direction deteriorates

Engineering Contradiction:
Improvetilt controllabilityVSAvoiduniformity of plasma density
Core Design Contradiction:
Ease of operationVSManufacturing precision

Solution Approach 1:

The patent moves the overlapping region of the first and second bias electrodes from the substrate support surface region to a region outside the substrate support surface and below the ring support surface. This spatial relocation in the vertical dimension eliminates the harmful electromagnetic interference within the substrate region while preserving the crosstalk necessary for tilt control, thereby resolving the contradiction between tilt controllability and plasma density uniformity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Ease of operation

If the first bias electrode and second bias electrode overlap in the substrate region, then tilt control is enhanced, but electromagnetic interference increases affecting plasma processing

Engineering Contradiction:
Improvetilt controlVSAvoidelectromagnetic interference
Core Design Contradiction:
Ease of operationVSObject-affected harmful factors

Solution Approach 1:

The patent extracts the overlapping region of the bias electrodes from the substrate support surface region and relocates it to a region outside the substrate support surface. This separation removes the harmful electromagnetic interference from the plasma processing region while maintaining the electrode crosstalk necessary for tilt control, effectively resolving the contradiction between tilt control enhancement and electromagnetic interference reduction.

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration maintains tilt controllability while enhancing the uniformity of plasma density in the circumferential direction, improving the overall performance of plasma processing by reducing the boundary of plasma density and minimizing electromagnetic influences.

Implementation Method 1

The electrostatic chuck includes a first bias electrode and a second bias electrode, the first bias electrode is provided at least partially below the substrate support surface, the second bias electrode is provided at least partially below the ring support surface

Methodology Applied
Scientific EffectElectrostatic field: Electric Field

Data Source

PatentUS20250006516A1Substrate support and plasma processing apparatus
Publication Date: 2025.01.02 TOKYO ELECTRON LTD
  • US20250006516A1 patent drawing
  • US20250006516A1 patent drawing
  • US20250006516A1 patent drawing

AI summary

There is provided a substrate support that achieves both tilt controllability and uniformity of plasma density in a circumferential direction of a substrate. The substrate support includes: a substrate support surface for supporting the substrate; a ring support surface for supporting an edge ring; and an electrostatic chuck. The electrostatic chuck includes a first bias electrode and a second bias electrode, the first bias electrode is provided at least partially below the substrate support surface, the second bias electrode is provided at least partially below the ring support surface, and the first bias electrode and the second bias electrode overlap each other in a plan view in at least a partial region outside the substrate support surface and below the ring support surface.