Substrate Support Electrode Layout for Equipotential Gas Diffusion

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Solution Overview

Problem

During plasma processing of semiconductor substrates, the generation of a potential difference inside the gas supply space can lead to abnormal discharge, which affects the uniformity and efficiency of the process.

Innovation Solution

The substrate support system includes dielectric members with integrated heat transfer gas diffusion spaces and electrodes, forming equipotential spaces to prevent potential differences and suppress abnormal discharge, with conductive members connecting the electrodes to the base for common voltage application.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If a gas supply pipe is provided inside the stage to supply heat transfer gas, then heat transfer function is improved, but abnormal discharge occurs due to potential difference inside the gas supply space

Engineering Contradiction:
Improveheat transferVSAvoidabnormal discharge
Core Design Contradiction:
TemperatureVSObject-affected harmful factors

Solution Approach 1:

A dielectric member is introduced as an intermediary substance filling the gas supply space. This dielectric member prevents abnormal discharge by eliminating potential differences within the gas supply space while still allowing heat transfer gas to flow through it, thus mediating between the thermal transfer requirement and the electrical discharge problem

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The electrical property parameter of the gas supply space is changed by filling it with a dielectric member, transforming the space from a conductive environment (prone to discharge) to an insulating environment (resistant to discharge), while maintaining thermal conductivity for heat transfer

Inventive Principle:
Principle #35Parameter changes

2Productivity

If electrodes are added to control plasma, then plasma processing capability is improved, but device complexity increases

Engineering Contradiction:
Improveplasma processing capabilityVSAvoidstructure complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The electrode is merged with the dielectric member, forming an integrated structure where the electrode is embedded within or on the dielectric member. This combination provides plasma control functionality while utilizing the dielectric member's space, avoiding the need for separate electrode mounting structures and reducing overall device complexity

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The dielectric member is given multiple functions: it serves as an insulator to prevent abnormal discharge, as a structural component of the gas supply space, and as a support for the electrode. This multi-functionality reduces the need for additional components and simplifies the overall device structure

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively suppresses abnormal discharge and ensures uniform temperature control and plasma processing results by maintaining an equipotential environment within the gas diffusion spaces, enhancing in-plane uniformity and process stability.

Implementation Method 1

a first heat transfer gas diffusion space configured to supply a heat transfer gas toward the substrate support surface

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

supply a heat transfer gas toward the substrate support surface and between a back surface of the edge ring and the ring support surface

Methodology Applied
Scientific EffectConvection: Convection

Implementation Method 3

a first electrode disposed above the first heat transfer gas diffusion space to vertically overlap with at least a part of the first heat transfer gas diffusion space

Methodology Applied
Scientific EffectPlasma generation: Plasma

Implementation Method 4

The first dielectric includes therein: a first heat transfer gas diffusion space configured to supply a heat transfer gas toward the substrate support surface; a first electrode disposed above the first heat transfer gas diffusion space

Methodology Applied
Scientific EffectElectrical discharge: Electrostatic Discharge

Data Source

PatentUS20240194514A1Substrate support and substrate processing apparatus
Publication Date: 2024.06.13 TOKYO ELECTRON LTD
  • US20240194514A1 patent drawing
  • US20240194514A1 patent drawing
  • US20240194514A1 patent drawing

AI summary

A substrate support disposed inside a plasma processing chamber includes a base electrically connected to at least one power supply, a first dielectric disposed on the base and having a substrate support surface, and a second dielectric disposed on the base to surround the first dielectric and having a ring support surface, wherein the first dielectric includes therein a first heat transfer gas diffusion space, a first electrode disposed above the first heat transfer gas diffusion space, and a conductor that electrically connects the first electrode and the base, and wherein the second dielectric includes therein a second heat transfer gas diffusion space, and a second electrode disposed above the second heat transfer gas diffusion space and electrically connected to a power supply that outputs a common voltage with the base.