Substrate Support Metal Bonding for Thermal Management
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In substrate processing for semiconductor devices, existing substrate supports with adhesive bonding between the base and electrostatic chuck face challenges in effectively cooling the substrate due to high thermal resistance, leading to inadequate temperature control during high-power RF processes like the 3D NAND High Aspect Ratio Contact process, where substrate heating can cause hole closure during deep etching.
Innovation Solution
A substrate support design featuring a conductive base with a flow path for temperature control, where the base and electrostatic chuck are bonded using a metal bonding layer with low thermal resistance, and a heat transfer member with a matching linear expansion coefficient to reduce thermal stress and enhance heat transfer, allowing for precise temperature adjustment of the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If adhesive bonding is used between the base and electrostatic chuck, then the structure is simple and easy to manufacture, but the thermal resistance is high resulting in inadequate cooling performance
Solution Approach 1:
The invention changes the bonding material from adhesive to metal bonding, fundamentally altering the thermal conductivity parameter of the bonding interface. This parameter change enables effective heat transfer from the substrate through the electrostatic chuck to the base, solving the cooling inefficiency while maintaining bonding functionality
Solution Approach 2:
The invention employs a composite structure consisting of the base, metal bonding layer, electrostatic chuck, and substrate. This composite design combines materials with different properties (conductive base, insulating yet conductive electrostatic chuck) to achieve both mechanical bonding and thermal management functions simultaneously
2Temperature
If metal bonding is used between the base and electrostatic chuck, then the thermal resistance is reduced improving cooling performance, but the thermal stress increases due to linear expansion coefficient mismatch
Solution Approach 1:
The invention explicitly addresses thermal expansion by selecting a metal bonding material whose linear expansion coefficient falls within a specific range (5×10⁻⁶ to 15×10⁻⁶ /°C.). This selection compensates for the expansion mismatch between the base and electrostatic chuck, reducing thermal stress while maintaining effective heat transfer
Solution Approach 2:
The invention changes multiple parameters simultaneously: the bonding method (from adhesive to metal bonding), the thermal conductivity of the bonding layer, and the linear expansion coefficient of the bonding material. These coordinated parameter changes resolve both the cooling efficiency and thermal stress issues
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables effective cooling of the substrate, maintaining it at a desired temperature even during high-power RF processes, preventing hole closure and ensuring accurate deep etching in the 3D NAND High Aspect Ratio Contact process.
Implementation Method 1
a metal bonding portion configured to mutually bond the base and the electrostatic chuck
Implementation Method 2
a heat transfer member configured to define a ceiling surface of the flow path and perform heat transfer between the fluid for temperature control and the electrostatic chuck
Implementation Method 3
an electrostatic chuck disposed above the base and having a support surface of the substrate on an upper surface of the electrostatic chuck
Data Source
AI summary
A substrate support includes: a conductive base having a flow path through which a fluid for temperature control flows; an electrostatic chuck disposed above the base and having a support surface of the substrate on an upper surface of the electrostatic chuck; and a metal bonding portion configured to mutually bond the base and the electrostatic chuck. The base includes: a main body member having at least one recess configured to define at least a part of a side surface of the flow path and a bottom surface of the flow path; and a heat transfer member configured to define a ceiling surface of the flow path and perform heat transfer between the fluid for temperature control and the electrostatic chuck.