Substrate Support Electrode Layout for Plasma Sheath Flatness
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Solution Overview
Problem
Existing plasma processing apparatuses face challenges in reducing the potential difference between the substrate and the edge ring due to phase differences in electrical biases, which can negatively impact plasma processing efficiency.
Innovation Solution
A substrate support system with a first and second electrode region, where the second electrode extends below the first electrode to face it within the first region, allowing for capacitive coupling and reducing the potential difference by applying a part of the second electrical bias to the first electrode and a part of the first electrical bias to the second electrode, thereby minimizing the phase difference's influence on plasma processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If two bias power sources are connected to the bias electrode and ring electrode respectively to form a flat plasma sheath, then plasma processing capability is improved, but potential difference between substrate and edge ring increases due to phase differences in electrical biases
Solution Approach 1:
The patent merges the functionality of two separate bias power sources by electrically connecting the ring electrode to the bias electrode, allowing a single bias power source to control both electrodes. This integration eliminates the phase difference issue while maintaining the ability to form a flat plasma sheath, thus resolving the contradiction between improved plasma processing capability and worsened potential difference control.
Solution Approach 2:
The bias electrode is given dual functionality: it serves as both the substrate bias electrode and the control electrode for the ring electrode. By making the ring electrode electrically connected to the bias electrode, the system achieves multi-functionality where one electrode structure performs multiple roles, eliminating the need for separate bias power sources and resolving the potential difference issue.
2Manufacturing precision
If two separate bias power sources are used for bias electrode and ring electrode, then plasma sheath flatness is improved, but device complexity increases
Solution Approach 1:
The patent reduces device complexity by merging the two separate bias power sources into a single bias power source. The ring electrode is electrically connected to the bias electrode, allowing one power source to control both electrodes simultaneously. This consolidation maintains plasma sheath flatness while eliminating the complexity of managing two separate power sources and their phase relationships.
Solution Approach 2:
The single bias power source is designed to perform multiple functions: it provides bias voltage to the substrate through the bias electrode and simultaneously controls the ring electrode voltage. This multi-functional design eliminates the need for separate power sources, reducing device complexity while maintaining plasma sheath quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces the potential difference between the substrate and the edge ring, enhancing plasma processing efficiency by mitigating the impact of phase differences between electrical biases.
Implementation Method 1
the first electrode and the second electrode are capacitively coupled to each other in the first region
Data Source
AI summary
The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.