Substrate Support Structure for Uniform Plasma and Warp Control
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Solution Overview
Problem
The challenge is to create a substrate processing device that can generate uniform plasma on a substrate while preventing substrate deformation, particularly due to the difficulty in arranging a radio frequency (RF) rod at the center of the upper electrode and the issue of excessive deformation caused by edge-contact susceptor (ECS) usage.
Innovation Solution
The device incorporates a substrate supporting unit with a base featuring a first protrusion adjacent to the periphery and a second protrusion at the center, both protrusions being of different heights, where the second protrusion is electrically connected to ground or an RF power supply, supporting the substrate during deformation and concentrating the electric field to distribute active species uniformly around the center.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If an RF rod is arranged at the center of the upper electrode to generate uniform plasma, then plasma uniformity is improved, but the arrangement becomes difficult due to physical interference from the gas supply port
Solution Approach 1:
The patent introduces a second protrusion at the center of the base as an intermediary structure that concentrates the electric field to generate uniform plasma. This mediator structure enables plasma generation without requiring physical placement of an RF rod at the center of the upper electrode, thus avoiding the physical interference issue while achieving the desired plasma uniformity
Solution Approach 2:
The patent replaces the mechanical approach of placing an RF rod physically at the center with an electrical field-based solution. By configuring the second protrusion with different height and electrical connection, the system generates uniform plasma through electric field concentration rather than through mechanical RF rod placement, substituting a mechanical arrangement problem with an electrical field solution
2Manufacturing precision
If an edge-contact susceptor (ECS) is used to support the substrate, then substrate positioning is improved, but excessive substrate deformation occurs
Solution Approach 1:
The patent applies local quality by creating a second protrusion with different height at the center of the base. This localized structural modification provides targeted support at the substrate center while maintaining the edge-contact positioning function, thereby preventing excessive substrate deformation in the center region without compromising positioning accuracy
Solution Approach 2:
The patent addresses substrate deformation by adding a vertical dimension solution - the second protrusion with different height provides support in the vertical dimension at the substrate center, complementing the horizontal edge-contact positioning. This dimensional addition prevents deformation without interfering with the original positioning mechanism
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures uniform plasma generation and prevents excessive substrate deformation, achieving a symmetrical thin-film profile during plasma atomic layer deposition processes.
Implementation Method 1
concentrating the electric field to distribute active species uniformly around the center
Implementation Method 2
supporting the substrate during deformation
Data Source
AI summary
A substrate processing device capable of preventing deformation of a substrate during a process includes a substrate supporting unit having a contact surface that comes into contact with an edge of a substrate to be processed, wherein the substrate supporting unit includes a protruding (e.g. embossed) structure protruding from a base to support deformation from the inside of the edge of the substrate to be processed.