Substrate Support Thermal Section for Uniform Chamber Heating
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Solution Overview
Problem
Existing semiconductor processing systems face challenges in uniformly maintaining temperature across the entire chamber, particularly near inlet/outlet valves, leading to temperature inconsistencies during deposition and annealing processes.
Innovation Solution
The semiconductor processing system incorporates a temperature controller with a thermal section under the substrate support, featuring divided plates and coupling section members that ensure uniform heat distribution and control, maintaining a temperature difference of 29°C or less between the highest and lowest spot temperatures during processes at 300°C or more.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a heater is used to control the internal temperature of the chamber, then the temperature can be maintained, but uniform temperature distribution across the entire chamber is difficult to achieve
Solution Approach 1:
The temperature controller is divided into multiple heating zones with independent heating elements positioned at different locations within the chamber. Each zone can be controlled separately to compensate for heat loss in specific regions, ensuring uniform temperature distribution across the entire chamber including areas near inlet/outlet valves.
Solution Approach 2:
Different regions of the chamber are equipped with heating elements of varying power outputs based on their specific thermal requirements. Regions with higher heat loss (such as areas near inlet/outlet valves) are provided with higher power heating elements, while regions with lower heat loss have correspondingly lower power elements, achieving localized temperature optimization.
2Temperature
If the temperature is increased to 300°C or more for deposition processes, then the deposition quality improves, but the temperature difference between highest and lowest spots becomes significant
Solution Approach 1:
Multiple temperature sensors are positioned throughout the chamber to continuously monitor temperature at different locations. The control system receives feedback from these sensors and dynamically adjusts the power output of individual heating zones to maintain uniform temperature distribution across the substrate surface, keeping the temperature difference between highest and lowest spots at 29°C or less.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively minimizes temperature variations across the substrate support, ensuring consistent heat application, maintenance, and dissipation, thereby enhancing the precision and reliability of semiconductor processing.
Implementation Method 1
a temperature controller configured to control application of heat, maintenance of heat and dissipation of heat with respect to the substrate support
Implementation Method 2
a temperature controller configured to control application of heat, maintenance of heat and dissipation of heat with respect to the substrate support
Data Source
AI summary
A semiconductor processing system includes; a chamber, a substrate support disposed in the chamber, and a temperature controller including a thermal section disposed under the substrate support and a coupling section including at least one coupling section member. The thermal section includes a first plate and a second plate spaced apart under the substrate support, and each of the first plate and the second plate is coupled to a side portion of the substrate by at least one coupling section member.