Substrate Support Assembly for Void-Free Plasma Feature Filling
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Solution Overview
Problem
Conventional semiconductor processing methods face challenges in filling high aspect ratio features with flowable films, leading to void formation and device performance issues due to unreliable deposition and separate treatment processes that increase processing time and reduce throughput.
Innovation Solution
A semiconductor processing system with decoupled high-frequency and low-frequency power sources and substrate support assemblies that enable controlled plasma generation and temperature management, allowing for repeatable plasma formation and uniform deposition within a single chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If material is deposited to fill high aspect ratio features, then feature filling is achieved, but voids form within the feature due to pinch-off between sidewalls
Solution Approach 1:
The patent applies dynamics by making the substrate support movable between different positions (first position for deposition, second position for treatment). This allows the system to dynamically switch between deposition mode and treatment mode, enabling the substrate to be moved closer to or farther from the plasma source as needed. This dynamic positioning resolves the contradiction by allowing controlled deposition to fill features while preventing void formation through subsequent treatment operations.
Solution Approach 2:
The patent implements periodic action through cyclic deposition and treatment operations. The substrate support alternates between receiving deposition operations at the first position and treatment operations at the second position. This periodic cycling allows material to be deposited in controlled amounts followed by treatment that prevents void formation, thereby achieving complete feature filling without defects.
2Manufacturing precision
If separate deposition and treatment processes are used, then material formation and removal are achieved, but processing time increases and throughput decreases
Solution Approach 1:
The patent merges deposition and treatment operations into a single processing chamber by providing a substrate support with two distinct positions within the same chamber. The first position enables deposition operations while the second position enables treatment operations. This merging eliminates the need to transfer substrates between separate chambers, thereby maintaining high-quality material formation while significantly improving processing throughput.
Solution Approach 2:
The substrate support serves multiple functions by being capable of positioning the substrate at different locations within the same chamber. It functions as both a deposition substrate holder and a treatment substrate holder. This multi-functionality allows the single chamber to perform both deposition and treatment operations, resolving the contradiction between maintaining manufacturing precision and improving productivity.
3Manufacturing precision
If continuous deposition occurs at top and sidewalls of features, then feature filling progresses, but feature pinch-off occurs between sidewalls
Solution Approach 1:
The patent applies preliminary action by performing treatment operations on the substrate before completing the deposition process. The substrate support moves to the second position to receive treatment that modifies the deposited material properties or removes excess material from sidewalls. This preliminary treatment prevents feature pinch-off from occurring during continued deposition, thereby maintaining feature geometry integrity while achieving complete filling.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system provides improved deposition control, reduces void formation, and maintains consistent substrate temperature, enhancing device quality and processing efficiency by integrating deposition and treatment operations in a single chamber.
Implementation Method 1
a platen insulator positioned between the platen and the pedestal shaft
Implementation Method 2
a low-frequency plasma source coupled with the substrate support
Implementation Method 3
a conductive shield extending along a backside of the platen insulator and coupled between a portion of the platen insulator and the pedestal shaft
Implementation Method 4
An RF rod may extend through the pedestal shaft. The RF rod may be electrically coupled with the platen
Implementation Method 5
a rod insulator extending about the RF rod along a length of the RF rod
Implementation Method 6
a high-frequency plasma source coupled with the faceplate. The systems may include a low-frequency plasma source coupled with the substrate support
Data Source
AI summary
Exemplary semiconductor substrate supports may include a pedestal shaft. The semiconductor substrate supports may include a platen. The platen may define a fluid channel across a first surface of the platen. The semiconductor substrate supports may include a platen insulator positioned between the platen and the pedestal shaft. The semiconductor substrate supports may include a conductive puck coupled with the first surface of the platen and configured to contact a substrate supported on the semiconductor substrate support. The semiconductor substrate supports may include a conductive shield extending along a backside of the platen insulator and coupled between a portion of the platen insulator and the pedestal shaft.