Substrate Supporter Gas Flow Path Structure for Discharge Suppression

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

In plasma processing systems, abnormal discharging occurs due to high RF power and DC voltage applied to the substrate supporter, leading to electrical damage and yield reduction, as existing gas flow path designs are insufficient in lengthening the gas flow path without structural changes.

Innovation Solution

The embedded member is composed of a first member with outer flow paths and a second member with inner flow paths, joined to create a longer gas flow path without altering the size or structure of the substrate supporter, effectively increasing the discharging start voltage and preventing abnormal discharging.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the gas flow path length is increased to prevent abnormal discharging, then the discharging start voltage increases and abnormal discharging is suppressed, but the device structure becomes more complex and the size of the substrate supporter increases

Engineering Contradiction:
Improveprevention of abnormal dischargingVSAvoidstructure of gas flow path
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The gas flow path is divided into multiple segments by stacking several disk-shaped members with flow paths. Each disk member contains flow paths that connect sequentially, creating a long overall flow path while maintaining a compact structure. This segmentation allows the gas to travel through a extended path length without requiring a single large complex structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Multiple disk-shaped members are stacked and nested within the substrate supporter structure. Each disk member is positioned within the others, creating a compact nested arrangement. The flow paths of these nested disks connect sequentially to form an extended gas flow path that fits within a limited space without increasing the overall device size significantly.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Reliability

If multiple gas flow path members are stacked to lengthen the gas flow path, then abnormal discharging is prevented, but the manufacturing complexity and assembly difficulty increase

Engineering Contradiction:
Improveprevention of abnormal dischargingVSAvoidassembly of gas flow path members
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The gas flow path is divided into multiple segments by stacking several disk-shaped members with flow paths. Each disk member contains flow paths that connect sequentially, creating a long overall flow path while maintaining a compact structure. This segmentation allows the gas to travel through an extended path length without requiring a single large complex structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Multiple disk-shaped members are integrated into a single assembly unit that is installed as one component in the substrate supporter. The members are stacked and connected in sequence, merging their individual flow paths into a unified extended flow path system. This combining approach simplifies the overall assembly process compared to installing multiple separate components.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design lengthens the gas flow path, reducing electron collision frequency and energy, thereby suppressing discharging and preventing abnormal electrical events, even with high voltage applications, thus enhancing processing yield and reliability.

Implementation Method 1

a first member (14) formed with one or more outer flow paths (14c) on an outer periphery of the embedded member; and a second member (15) formed with one or more inner flow paths (15c, 15d) connected to the one or more outer flow paths (14c) by joining with the first member (14)

Methodology Applied
Scientific EffectGas flow: Convection

Implementation Method 2

This design lengthens the gas flow path, reducing electron collision frequency and energy, thereby suppressing discharging and preventing abnormal electrical events

Methodology Applied
Scientific EffectElectron collision:

Data Source

PatentUS11837442B2Plasma processing apparatus and substrate supporter
Publication Date: 2023.12.05 TOKYO ELECTRON LTD
  • US11837442B2 patent drawing
  • US11837442B2 patent drawing
  • US11837442B2 patent drawing

AI summary

A plasma processing apparatus includes a process container, an electrode arranged inside the process container and applied with desired high frequency power, a member having the electrode, and an embedded member arranged in the member. The embedded member is composed of a first member formed with one or more outer flow paths on an outer periphery of the embedded member, and a second member formed with one or more inner flow paths connected to the one or more outer flow paths by joining with the first member. The one or more outer flow paths and the one or more inner flow paths communicate with each other.