Electrostatic Substrate Supporter for Uniform Warpage Chucking
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing substrate processing apparatuses face challenges in uniformly chucking substrates with warpage during deposition or etching processes, leading to potential damage from excessive electrostatic forces and reduced reliability due to inadequate contact patterns.
Innovation Solution
The substrate supporter features a base with an outer dam, a contact band, and multiple contact patterns, where the first contact pattern has a larger area ratio compared to the contact band, allowing for uniform electrostatic force application even with warped substrates, preventing damage and enhancing processing reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a contact band is used to chuck the substrate, then the substrate can be held in place, but excessive electrostatic force may damage the substrate bottom surface
Solution Approach 1:
The contact band is divided into multiple contact patterns (first contact pattern, second contact pattern, third contact pattern) with different area ratios. This segmentation distributes the electrostatic force across multiple zones, preventing excessive force concentration at any single location that could damage the substrate bottom surface.
Solution Approach 2:
Different contact patterns are designed with different area ratios to create localized variations in electrostatic force distribution. The first contact pattern has a larger area ratio to provide stronger holding force where needed, while the second and third contact patterns have smaller area ratios to reduce force concentration and prevent damage to the substrate bottom surface.
2Device complexity
If a uniform contact band is used, then the structure is simple, but it cannot uniformly chuck substrates with warpage
Solution Approach 1:
The contact band is designed with non-uniform contact patterns having different area ratios at different locations. This local quality variation allows the contact band to adapt to substrate warpage by providing different electrostatic force levels in different zones, achieving uniform chucking of warped substrates while maintaining overall structural simplicity.
3Force
If the contact band area is increased to improve chucking force, then substrate holding improves, but damage risk increases
Solution Approach 1:
The contact band area is segmented into multiple contact patterns with different area ratios. This segmentation allows the total electrostatic force to be distributed across multiple zones, increasing overall chucking force while preventing excessive force concentration that could damage the substrate bottom surface.
Solution Approach 2:
Different contact patterns have different area ratios to create localized force variations. The first contact pattern with larger area ratio provides stronger holding force, while the second and third contact patterns with smaller area ratios reduce force concentration, thereby increasing overall chucking effectiveness while minimizing damage risk.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution ensures uniform electrostatic force application across the substrate, preventing damage from excessive force and improving the reliability of substrate processing by effectively chucking substrates with warpage, thus ensuring consistent and reliable processing outcomes.
Implementation Method 1
the contact band and the first contact pattern may chuck the substrate with a uniform electrostatic force
Data Source
AI summary
The present disclosure relates to substrate supporters and substrate processing apparatuses. An example substrate supporter includes an upper surface on which a substrate is loaded, a base, an outer dam extending along an edge of the base, a contact band connected with the outer dam, extending along the circumferential direction of the base, and onto which the substrate is loaded, and a first contact pattern disposed adjacent to the contact band and extending into an inside of the contact band, the first contact pattern extending along the circumferential direction of the base, where an area of the first contact pattern is larger than an area where the contact band overlaps with the substrate.


