Multi-Step Substrate Temperature Control via Segmented Heating
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Solution Overview
Problem
Current semiconductor processing systems face challenges in precisely controlling substrate temperatures, which are crucial for various processes like etch and deposition, due to limitations in temperature uniformity and stability across the substrate.
Innovation Solution
A substrate processing system with a holder featuring temperature sensors, heating and cooling elements, and a thermal insulator that allows for selective temperature control of inner and outer regions, enabling precise set-point temperature maintenance and rapid temperature transitions using a PID control algorithm.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single temperature control system is used for the substrate holder, then the device complexity is reduced, but the temperature uniformity across the substrate deteriorates
Solution Approach 1:
The substrate holder is divided into multiple independently controllable heating zones (first heating element for inner region, second heating element for outer region) with separate temperature control, allowing different temperature profiles to be applied to different spatial regions of the substrate
Solution Approach 2:
Different regions of the substrate holder are equipped with distinct heating elements and insulation characteristics (uniform vs. non-uniform insulating layer) to create locally optimized temperature distributions, with the inner region receiving heat from the first heating element and the outer region from the second heating element
2Productivity
If rapid temperature transitions are implemented, then the productivity is improved, but the temperature stability deteriorates
Solution Approach 1:
The base support temperature is pre-adjusted to match the desired substrate temperature before substrate processing begins, and the insulating layer is pre-configured with optimized thickness distribution to minimize thermal gradients and facilitate rapid, stable temperature transitions
Solution Approach 2:
Temperature sensors continuously monitor the substrate temperature and provide feedback to the control system, which adjusts the heating elements and cooling element in real-time to maintain the desired temperature profile during rapid transitions and steady-state processing
3Manufacturing precision
If multi-step temperature control is implemented, then the manufacturing precision is improved, but the device complexity increases
Solution Approach 1:
The temperature control system dynamically switches between different heating configurations (first heating element only, second heating element only, or both simultaneously) and adjusts power levels based on the required temperature profile, enabling multi-step temperature control sequences for different process stages
Solution Approach 2:
The base support serves multiple functions: it provides structural support, acts as a thermal reservoir, functions as a cooling element when needed, and serves as a mounting platform for the insulating layer, thereby reducing the need for separate components and mitigating system complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution provides accurate and rapid temperature control, enhancing the stability and uniformity of substrate temperatures, thereby improving the efficiency of semiconductor processing operations.
Implementation Method 1
first and second heating elements heating respectively the inner and the outer regions
Implementation Method 2
radiative and/or conductive thermal exchange with the surrounding environment
Implementation Method 3
base support having a cooling element for cooling the inner and the outer regions
Implementation Method 4
thermal insulator disposed between the substrate support and said base support
Data Source
AI summary
A method of changing the temperature of a substrate during processing of the substrate includes providing the substrate on a substrate holder, the substrate holder including a temperature controlled substrate support for supporting the substrate, a temperature controlled base support for supporting the substrate support and a thermal insulator interposed between the temperature controlled substrate support and the temperature controlled base support. The method further includes setting the temperature of the base support to a first base temperature corresponding to a first processing temperature of said substrate, setting the substrate support to a first support temperature corresponding to said first processing temperature of said substrate, setting the temperature of the base support to a second base temperature corresponding to a second processing temperature of said substrate, and setting the substrate support to a second support temperature corresponding to said second processing temperature of said substrate.