Semiconductor Substrate Processing with Reversible Temperature Gradients
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Solution Overview
Problem
Current methods for etching and growing semiconductor substrates are performed using different devices and environments, which is costly and inefficient, necessitating a method for performing both processes in the same device system.
Innovation Solution
A method and device that utilize a temperature gradient to switch between etching and growth processes by reversing the temperature gradient between the semiconductor substrate and the release and reception body, allowing for both processes to be performed in the same device system, with a heating process in a semi-closed space and under an atmosphere containing atomic species, using a main container made of material constituting the semiconductor substrate to suppress unintended reactions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If etching and growth are performed using different devices under different environments, then the quality of semiconductor substrate processing is maintained, but the manufacturing cost increases and efficiency decreases
Solution Approach 1:
The patent combines etching and growth functions into a single processing device by implementing reversible temperature gradient control. The same device can perform etching when the temperature gradient directs material removal, and growth when the gradient is reversed to enable material deposition, thereby eliminating the need for separate devices and improving manufacturing efficiency while maintaining processing quality
Solution Approach 2:
The processing device is designed with multi-functionality to perform both etching and growth operations. By incorporating temperature gradient inversion capability, the device can switch between opposing functions (material removal and material deposition) using the same hardware infrastructure, reducing overall system complexity and cost while preserving the reliability of each individual process
2Productivity
If the same device system is used for both etching and growth, then manufacturing cost is reduced and efficiency is improved, but the device complexity increases
Solution Approach 1:
The patent manages device complexity by utilizing parameter changes rather than structural modifications. The same physical device structure is used for both etching and growth, with the key parameter being the temperature gradient direction. By inverting the temperature gradient parameter, the device switches between functions without requiring additional components or structural changes, thus minimizing device complexity while maintaining high manufacturing efficiency
3Adaptability or versatility
If temperature gradient is used as driving force for etching and growth, then the same device can perform both processes, but unintended reactions between semiconductor substrate and release and reception body may occur
Solution Approach 1:
The patent introduces a release and reception body as an intermediary between the semiconductor substrate and the processing environment. This intermediary component facilitates the temperature gradient-driven material transport while protecting the semiconductor substrate from direct contact and unintended reactions with the processing chamber walls or other components, thus enabling versatile processing while minimizing harmful side reactions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the reduction of manufacturing costs and improvement of efficiency by allowing etching and growth to be performed in the same device system, with controlled temperature gradients and reaction conditions, thereby optimizing the semiconductor substrate processing.
Implementation Method 1
a first heating process of heating a heat treatment space accommodating a semiconductor substrate and a release and reception body that transports atoms to and from the semiconductor substrate in a manner that a temperature gradient is formed between the semiconductor substrate and the release and reception body
Implementation Method 2
a second heating process of reversing the temperature gradient and heating the temperature gradient
Data Source
AI summary
Provided are a method for etching and growing a semiconductor substrate in the same device system, and a device therefor. The method for manufacturing a semiconductor substrate includes a first heating step of heating a heat treatment space which contains a semiconductor substrate and a transmission/reception body that transports atoms between the semiconductor substrate and the transmission/reception body such that a temperature gradient is formed between the semiconductor substrate and the transmission/reception body, and a second heating step of heating the same with the temperature gradient being vertically inverted.