Semiconductor Substrate Thickness Mapping for High-Temperature Uniform Heating
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Solution Overview
Problem
Existing temperature evaluation methods for heating furnaces struggle to accurately assess temperature distribution in high-temperature regions, such as 1600 to 2200° C, due to material limitations of thermocouples and difficulties with wiring.
Innovation Solution
A novel temperature distribution evaluation method that involves heating a semiconductor substrate and a release and reception body within the heating region, using the substrate thickness change amount to evaluate temperature distribution without the need for thermocouple wiring.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a thermocouple is used to measure temperature in high-temperature regions (1600-2200°C), then temperature measurement is possible, but the material limit of the thermocouple prevents accurate measurement in this temperature range
Solution Approach 1:
The patent uses a semiconductor substrate as an intermediary medium to transfer temperature information. Instead of directly measuring temperature with a thermocouple in the high-temperature zone, the substrate absorbs thermal energy and transports it to a lower-temperature measurement zone where thickness changes can be accurately detected, thereby protecting the measurement device from direct exposure to extreme temperatures.
Solution Approach 2:
The patent replaces the direct thermal measurement mechanism (thermocouple) with an indirect mechanical measurement mechanism. By measuring the thickness change of the semiconductor substrate that has been thermally processed, the system converts a thermal measurement problem into a mechanical dimension measurement problem, which can be performed at lower temperatures with higher precision.
2Measurement precision
If a thermocouple is wired from outside the heating region to measure temperature, then temperature measurement is possible, but temperature escapes from the wiring location causing inaccurate distribution evaluation
Solution Approach 1:
The semiconductor substrate serves as a thermal intermediary that captures the temperature distribution pattern across the heating region and physically transports this thermal information to a measurement location outside the heating zone. This eliminates the need for wiring into the heating region while preserving the spatial temperature distribution data through the substrate's thickness variations.
Solution Approach 2:
The patent creates a thermal copy of the heating region's temperature distribution on the semiconductor substrate. The substrate's thickness changes replicate the temperature profile, allowing external measurement of the copied thermal pattern without direct intrusion into the heating zone, thus avoiding temperature escape through wiring.
3Productivity
If conventional temperature management methods are used for high-melting-point semiconductor materials, then processing is possible, but difficulty in temperature management reduces manufacturing yield
Solution Approach 1:
The patent establishes a feedback loop for temperature management by measuring the semiconductor substrate's thickness changes after thermal processing and using this information to evaluate and adjust the heating conditions. This closed-loop system enables precise control of high-temperature processes for high-melting-point materials, directly improving manufacturing yield through better temperature management.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate temperature distribution evaluation in high-temperature regions, improving temperature management in semiconductor manufacturing processes and enhancing manufacturing yield.
Implementation Method 1
the raw material is a sublimation gas generated from the semiconductor substrate (10) or the release and reception body (20)
Implementation Method 2
heating a semiconductor substrate (10) and a release and reception body (20), which transports a raw material to and from the semiconductor substrate (10), in a heating region
Data Source
Figure 1
Figure 2(a)~2(b)
Figure 3
AI summary
To provide a new temperature distribution evaluation method, a temperature distribution evaluation device, and a soaking range evaluation method, as the temperature distribution evaluation method which evaluates a temperature distribution of a heating area 40A provided in a heating device 40, the present invention is a temperature distribution evaluation method which, in the heating area 40A, heats a semiconductor substrate 10 and a transmitting and receiving body 20 for transporting a raw material to and from the semiconductor substrate 10, and evaluates a temperature distribution of the heating area 40A on the basis of a substrate thickness variation amount A of the semiconductor substrate 10. Accordingly, temperature distribution evaluation can be implemented for a high temperature area at 1600 - 2200°C or the like at which it is hard to evaluate the temperature distribution due to the limit of a thermocouple material.