Substrate Processing Timing Control for Wafer Count Drift

The patent applies parameter changes by introducing an offset time parameter that is added to the step time in the process recipe. This offset time is determined based on the number of wafers already processed or the cumulative film thickness, allowing the system to dynamically adjust processing parameters without changing the fundamental process recipe structure. This resolves the contradiction by improving manufacturing precision through parameter adjustment while avoiding device complexity by using a simple additive offset mechanism rather than complex parameter tuning.

The patent replaces the mechanical approach of manually adjusting multiple process parameters with an automated timing-based control system. Instead of mechanically tuning various parameters to compensate for chamber state changes, the system uses a controller that automatically adds offset time based on wafer count or film thickness, substituting complex mechanical parameter adjustment with a simpler computational timing mechanism.

The patent changes the approach to parameter optimization by using a pre-determined offset time parameter that is automatically applied based on wafer count or film thickness. This eliminates the need for extensive real-time parameter tuning during production, thereby maintaining film formation quality while improving throughput by reducing the time required for parameter adjustments.

The patent applies preliminary action by pre-calculating and storing offset time values that correspond to different wafer counts or film thickness ranges. Instead of performing extensive parameter tuning during the actual film formation process, the system has already determined the appropriate offset times in advance, allowing for quick automatic application and thus maintaining productivity while ensuring manufacturing precision.