Substrate Treating Apparatus Exhaust Pressure Segmentation
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Solution Overview
Problem
Current substrate treating processes in photolithography, etching, ion implantation, and deposition for semiconductor and liquid crystal display fabrication are inefficient and result in suboptimal substrate processing quality due to lengthy treatment times and variations in film thickness caused by pressure differences within the process chamber.
Innovation Solution
A substrate treating apparatus and method that divides the treatment process into two steps, with distinct pressure control by the exhaust member, using a support member with a heater and lift pins to manage substrate loading and unloading, and varying the exhaust pressure from a secondary to a main pressure to optimize substrate processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the substrate treating process uses a single exhaust pressure throughout the entire treatment step, then the device operation is simple, but the treatment time is extended and processing quality deteriorates due to pressure variations causing film thickness deviations
Solution Approach 1:
The substrate treating step is divided into two distinct steps: a first treating step with a first exhaust pressure and a second treating step with a second exhaust pressure. This segmentation allows optimization of treatment speed in one step while ensuring film thickness uniformity in another step, resolving the contradiction between productivity and manufacturing precision.
Solution Approach 2:
The exhaust pressure is dynamically changed from a first exhaust pressure during the first treating step to a second exhaust pressure during the second treating step. This dynamic adjustment enables the system to achieve both high treatment speed and uniform film thickness by optimizing pressure conditions for different phases of the treatment process.
2Loss of time
If the exhaust pressure is increased to reduce treatment time, then productivity improves, but film thickness uniformity deteriorates due to excessive pressure variations
Solution Approach 1:
The treatment process is segmented into two steps with different exhaust pressures. The first treating step uses a higher first exhaust pressure to reduce treatment time, while the second treating step uses a different second exhaust pressure to ensure film thickness uniformity, thus resolving the contradiction between time efficiency and precision control.
Solution Approach 2:
The exhaust pressure parameter is changed between two distinct values (first exhaust pressure and second exhaust pressure) at different stages of the treatment process. This parameter change allows the system to optimize both treatment time and film thickness control by applying appropriate pressure levels at appropriate times.
3Ease of operation
If the heater starts operation after substrate loading is complete, then the loading process is simple, but the overall treatment time increases
Solution Approach 1:
The heater is configured to start operation during the substrate loading process rather than waiting for loading to complete. This preliminary action reduces the total process duration by overlapping the heating preparation with the loading operation, while maintaining operational simplicity through automated control.
Solution Approach 2:
The heater operates continuously from the start of the substrate treating step, including during the loading process. This continuous operation eliminates idle time and ensures that heating is already in progress when the substrate is ready, thereby reducing overall treatment time without complicating the loading procedure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces treatment time and improves substrate processing quality by uniformly heating and exhausting the substrate, minimizing pressure-related film thickness deviations and enhancing overall processing efficiency.
Implementation Method 1
a support member positioned in an inner space of the process chamber to support the substrate
Implementation Method 2
an exhaust member for providing a suction pressure to the exhaust line
Data Source
AI summary
A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus comprises: a process chamber; a support member positioned in an inner space of the process chamber to support the substrate; an exhaust line provided to communicate with the interior of the process chamber; an exhaust member for providing a suction pressure to the exhaust line; and a controller for controlling the exhaust member when dividing the substrate treating step in which the treating for the substrate is performed into the first treating step and the second treating step, a difference is generated between the pressure that the exhaust member provides to the exhaust line in the first treating step and the pressure that the exhaust member provides to the exhaust line in the second treating step.