Substrate Treating Apparatus with Localized Laser Heating
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Solution Overview
Problem
Existing substrate treating processes face challenges in achieving uniform line widths of patterns on semiconductor wafers due to deviations in etching rates between different patterns, leading to over-etching and inefficiencies in the exposure and etching processes.
Innovation Solution
A substrate treating apparatus and method that includes a support unit for rotating the substrate, a liquid supply unit for precise application of etching liquids, and a heating unit with a controller to control the emission of thermal energy, such as laser light, to specific patterns, allowing for targeted heating and etching rate adjustments without rotating the substrate during etching liquid application.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If uniform etching liquid is supplied onto the substrate, then the etching process can be performed, but the line widths of different patterns cannot be precisely controlled and uniformity is poor
Solution Approach 1:
The patent applies local quality by differentiating the etching treatment for different patterns on the substrate. Specifically, the first pattern and second pattern receive different etching liquid supply amounts or different heating temperatures, allowing each pattern to achieve its target line width independently. This resolves the contradiction by enabling precise line width control (improving manufacturing precision) through localized parameter adjustment rather than uniform treatment, while the complexity increase is managed through a controllable liquid supply unit and heating unit.
Solution Approach 2:
The patent employs parameter changes by varying the etching liquid supply amount or heating temperature for different patterns. The controller adjusts these parameters based on the specific requirements of each pattern type (first pattern vs. second pattern), enabling precise control over etching rates to achieve uniform target line widths. This approach improves manufacturing precision by dynamically optimizing etching parameters for each pattern while maintaining manageable process complexity through automated control.
2Manufacturing precision
If over-etching is performed to reduce etching rate differences between patterns, then line width uniformity improves, but the etching process time increases
Solution Approach 1:
The patent applies preliminary action by pre-determining the optimal etching liquid supply amounts or heating temperatures for different patterns before the etching process begins. The controller is configured to supply different parameters to the first pattern and second pattern from the start, preventing over-etching rather than correcting it afterward. This resolves the contradiction by achieving line width uniformity (improving manufacturing precision) through upfront parameter optimization, thereby avoiding the time loss associated with extended over-etching processes.
Solution Approach 2:
The patent employs feedback mechanisms where the controller monitors the etching process and adjusts the liquid supply amount or heating temperature for different patterns based on real-time conditions. This feedback control enables precise line width management without requiring excessive etching time, as the system automatically optimizes the etching rate for each pattern type. This resolves the contradiction by improving manufacturing precision through active control while maintaining efficient process timing.
3Manufacturing precision
If the substrate is not rotated during etching liquid supply, then precise thermal energy application to specific patterns is enabled, but uniform liquid distribution becomes challenging
Solution Approach 1:
The patent replaces the mechanical rotation method with a targeted liquid supply system. Instead of rotating the substrate to achieve uniform liquid distribution, the liquid supply unit is equipped with a controller that precisely directs etching liquid to specific patterns (first pattern and second pattern) based on their locations. This substitution enables precise thermal energy application to specific patterns (improving manufacturing precision) while maintaining liquid distribution uniformity through controlled delivery mechanisms rather than mechanical mixing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach minimizes treatment deviations and achieves uniform line widths by optimizing the etching process through precise control of thermal energy application and liquid distribution, enhancing the precision and efficiency of pattern formation on semiconductor wafers.
Implementation Method 1
a heating unit for heating any one of the first pattern and the second pattern... an emitting member for emitting light having thermal energy to the substrate
Implementation Method 2
the emitting member may be configured such that the light emitted to the substrate is a laser
Data Source
AI summary
The present invention provides a substrate treating apparatus including: a support unit for supporting and rotating a substrate on which a first pattern and a second pattern different from the first pattern are formed; a liquid supply unit for supplying a treatment liquid to the substrate supported on the support unit; and a heating unit for heating any one of the first pattern and the second pattern.