Substrate Treating Method for Semiconductor Pattern Integrity
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Solution Overview
Problem
During the drying process in semiconductor device manufacturing, fine patterns on the substrate are often plastically deformed due to the surface tension of wash liquids, which can lead to pattern displacement and contact between adjacent features, causing covalent bonding and irreversible deformation.
Innovation Solution
A substrate treating method involving a series of liquid substitutions and film formation steps, where a solvent is used to prevent direct contact between patterns by forming a sublimatable film on the pattern surface, allowing the film to volatilize and restore the original pattern shape, thereby mitigating the effects of surface tension during drying.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a wash liquid is used during drying to remove contaminants from the substrate, then cleaning effectiveness is improved, but the surface tension of the liquid causes plastic deformation of fine patterns
Solution Approach 1:
A solidifiable solvent is introduced as an intermediary substance between the wash liquid and the pattern. The solvent forms a protective film on the pattern surface during drying, preventing direct contact between the liquid and pattern, thereby eliminating surface tension-induced deformation while maintaining cleaning effectiveness
Solution Approach 2:
The solvent undergoes phase transition from liquid to solid during the drying process. This phase change allows the solvent to form a stable protective film on the pattern surface, which prevents plastic deformation caused by liquid surface tension, and then the solid film is removed without damaging the pattern
2Productivity
If the pattern size is reduced to enable further miniaturization, then device integration is improved, but the patterns become more susceptible to plastic deformation from liquid surface tension
Solution Approach 1:
The solidifiable solvent acts as a protective intermediary that scales down with the pattern size. Even for ultra-fine patterns, the solvent forms a proportionally scaled protective film that prevents surface tension from causing deformation, enabling safe miniaturization
Solution Approach 2:
The solvent is applied beforehand to form a protective film on the pattern surface before the harmful drying process occurs. This pre-established protective layer cushions the pattern against surface tension forces, enabling safe reduction of pattern dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method prevents plastic deformation of patterns by allowing the film to sublimate, maintaining pattern integrity and enabling further miniaturization and integration of semiconductor devices, while ensuring the film does not remain in the finished products.
Implementation Method 1
providing, after the second liquid is provided, a third liquid onto the pattern; turning the third liquid into gas; and turning, after the third liquid is turned into gas, the film into gas
Implementation Method 2
turning the third liquid into gas; and turning, after the third liquid is turned into gas, the film into gas
Data Source
AI summary
According to one embodiment, a substrate treating method includes: providing a first liquid onto a pattern on a substrate; providing, after the first liquid is provided, a second liquid containing a first substance to form a film containing the first substance on the pattern; providing, after the second liquid is provided onto the pattern, a third liquid; turning the third liquid into gas; and turning, after the third liquid is turned into gas, the film into gas.