Substrate Treating Apparatus Under-Substrate Gas Discharge

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Solution Overview

Problem

Current substrate treating methods face challenges in achieving appropriate film deposition due to incomplete phase separation of polymers during heat treatment, primarily caused by inadequate oxygen concentration in the treatment atmosphere, which affects the properties and performance of deposited films.

Innovation Solution

A substrate treating method and apparatus that involve loading the substrate on support pins, exhausting gas, supplying inert gas, discharging gas from the under-substrate space, and retracting the pins for heat treatment, effectively reducing oxygen concentration and creating a suitable treatment atmosphere by replacing stagnant oxygen with inert gas.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If gas exhaustion and inert gas supply are performed in the heat treating space, then oxygen concentration is reduced and film deposition quality is improved, but oxygen in the under-substrate space remains stagnant and treatment atmosphere becomes unsuitable

Engineering Contradiction:

Improvefilm deposition qualityVSAvoidoxygen stagnation in under-substrate space

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent divides the gas treatment into two separate spaces: the heat treating space above the substrate and the under-substrate space below the substrate. By segmenting the gas exhaustion and inert gas supply operations, the invention addresses oxygen removal in both spaces independently, ensuring complete oxygen elimination and preventing oxygen stagnation that would otherwise occur in the under-substrate space.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent introduces an intermediary gas discharge mechanism that operates specifically for the under-substrate space. This intermediary system includes a gas discharge hole formed in the heat treating plate, which allows stagnant oxygen in the under-substrate space to be evacuated through an independent pathway, acting as a mediator between the under-substrate space and the external environment.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Manufacturing precision

If support pins are used to load substrate, then substrate positioning is achieved, but oxygen accumulates in the narrow under-substrate space and adversely affects phase separation

Engineering Contradiction:

Improvesubstrate positioning accuracyVSAvoidphase separation quality

Core Design Contradiction:

Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The patent performs preliminary gas discharge from the under-substrate space before the heat treatment process begins. By evacuating oxygen from the under-substrate space in advance through the gas discharge hole, the system prevents oxygen accumulation that would otherwise occur during substrate loading and positioning, ensuring optimal conditions for subsequent phase separation.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent applies different gas treatment conditions to different locations: the heat treating space receives continuous inert gas supply and exhaustion, while the under-substrate space receives targeted gas discharge through the heat treating plate. This localized quality approach ensures that each space has the appropriate atmosphere for its specific function, preventing oxygen stagnation in the under-substrate space while maintaining precise substrate positioning.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach ensures a stable and suitable treatment atmosphere for heat treatment, leading to appropriate film deposition and phase separation, particularly in the DSA process, by maintaining an extremely low oxygen concentration, thus improving the properties and performance of the deposited films.

Implementation Method 1

supplying inert gas into the heat treating space; discharging gas within an under-substrate space between the substrate and the top face of the heat treating plate

Methodology Applied

Scientific EffectGas displacement:

Implementation Method 2

performing a heat treatment of heating the treated film on the substrate in a heat treating space of a heat treating chamber

Methodology Applied

Scientific EffectThermal heating: Heating

Implementation Method 3

separation of two types of polymers in the treated film is performed

Methodology Applied

Scientific EffectPhase separation:

Data Source

PatentUS10900126B2Substrate treating method and apparatus used therefor

Publication Date: 2021.01.26 SCREEN HOLDINGS CO LTD

AI summary

Disclosed is a substrate treating method for performing a heat treatment of a substrate in a heat treating space. The method includes a loading step of loading the substrate on support pins, an exhaust step of exhausting gas within the heat treating space, an inert gas supply step of supplying inert gas into the heat treating space, an under-substrate space gas discharging step of discharging gas within an under-substrate space between the substrate and the top face of the heat treating plate, and a heat treating step of retracting the support pins into the heat treating plate, and performing the heat treatment of the substrate placed on the top face of the heat treating plate in the heat treating space.