Substrate Treatment Cooling Module for Gas Phase Silylation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor wafer processing, using silylation agents and isopropyl alcohol (IPA) in a gas state in batch treatment apparatuses leads to excessive chemical usage and pattern collapse due to vaporization during the silylation process.
Innovation Solution
A substrate treatment apparatus that supplies silylation agents and IPA in a gas state while cooling the semiconductor wafers with a coolant gas or liquid to prevent vaporization and maintain temperatures below the boiling points of the chemicals, thereby reducing chemical usage and preventing pattern collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If silylation agent and IPA are used in liquid state in batch treatment apparatus, then chemical coverage is sufficient, but chemical consumption is extremely large
Solution Approach 1:
The patent changes the physical state parameter of the chemicals from liquid to gas phase. By supplying silylation agent and IPA in vapor state instead of liquid state, the chemical consumption is dramatically reduced while maintaining effective treatment. The gas phase chemicals can uniformly cover the wafer surface without the excessive用量 problem of liquid state batch treatment.
Solution Approach 2:
The patent uses gas phase delivery system (pneumatic approach) to supply silylation agent and IPA vapors to the wafer. The chemicals are transported and distributed in gaseous form through the treatment chamber, enabling uniform deposition with minimal chemical consumption compared to liquid flooding methods.
2Quantity of substance
If silylation agent and IPA are used in gas state, then chemical consumption is reduced, but pattern collapse occurs due to vaporization
Solution Approach 1:
The patent applies preliminary cooling action before and during the chemical supply process. The wafer is pre-cooled to a temperature below the dew point of the supplied chemicals, and cooling continues during chemical deposition. This preliminary and continuous cooling prevents vaporization of the deposited chemicals, maintaining pattern integrity while using gas phase delivery.
Solution Approach 2:
The patent applies preliminary anti-action by introducing cooling as a counter-measure to the vaporization tendency of gas phase chemicals. The cooling system is activated before chemical supply and operates concurrently to counteract the heat that would cause vaporization and pattern collapse, thereby preventing the harmful effect before it occurs.
3Quantity of substance
If chemicals are supplied in gas state without cooling, then chemical consumption is reduced, but chemicals vaporize and dry the wafer
Solution Approach 1:
The wafer is pre-cooled to a temperature below the dew point of the supplied chemicals before gas phase chemical delivery begins. This preliminary cooling ensures that when the chemicals are supplied, they condense on the cold wafer surface rather than vaporizing, maintaining appropriate wafer temperature and humidity conditions.
Solution Approach 2:
The cooling action continues continuously throughout the chemical supply process, not just as a preliminary step. This continuous cooling maintains the wafer temperature below the dew point throughout the entire deposition period, ensuring consistent chemical condensation and preventing wafer drying, thereby sustaining the useful effect throughout the process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively reduces chemical consumption and prevents pattern collapse on semiconductor wafers by controlling the temperature and vaporization of silylation agents and IPA, ensuring stable processing in batch treatment environments.
Implementation Method 1
a cooling module configured to cool the substrate in the housing while any of the one or more chemicals is supplied to the substrate in the housing
Implementation Method 2
the silylation agent and the IPA are liquefied on the surface of the semiconductor wafer to be attached to the semiconductor wafer, so that the semiconductor wafer can be wet. However, the silylation agent and the IPA attached to the semiconductor wafer are vaporized during the silylation
Data Source
AI summary
In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying module configured to supply one or more chemicals in a gas state to the substrate in the housing, the one or more chemicals including a first chemical that contains a silylation agent. The apparatus further includes a cooling module configured to cool the substrate in the housing while any of the one or more chemicals is supplied to the substrate in the housing.