Substrate Treatment Nozzle Flow Control for Etching Efficiency
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Solution Overview
Problem
The etching process in semiconductor and liquid crystal display panel fabrication requires a higher selective ratio and etching rate, with existing substrate treatment methods being inefficient in achieving these goals, particularly in the chemical and cleaning processes.
Innovation Solution
A substrate treating apparatus and method that differentiates treatment liquid flow and heating between low-flow-supply and high-flow-supply sections, with controlled discharge and heating, using a support member, treatment liquid nozzle, and heating member to optimize substrate treatment, including rotation and temperature control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If treatment liquid is supplied at high flow rate throughout the entire process, then etching rate increases, but treatment liquid consumption increases and heating efficiency decreases
Solution Approach 1:
The patent applies periodic action by dividing the treatment process into distinct phases: a first treatment phase with high flow rate treatment liquid supply to achieve high etching rate, followed by a second treatment phase with reduced or stopped supply to conserve treatment liquid. This periodic variation in supply rate optimizes both etching efficiency and resource consumption.
2Productivity
If treatment liquid is supplied at high flow rate throughout the entire process, then etching rate increases, but heating efficiency decreases
Solution Approach 1:
The patent implements periodic action by alternating between high flow rate supply during the first treatment phase (when heating is less critical) and reduced supply during the second treatment phase (when heating efficiency is prioritized). This timing optimization ensures that energy is used more efficiently while maintaining overall etching productivity.
3Loss of substance
If treatment liquid supply is reduced in low-flow-supply section, then treatment liquid consumption decreases, but etching efficiency may be compromised
Solution Approach 1:
The patent applies preliminary action by performing the high flow rate treatment in the first treatment phase before transitioning to reduced supply. This preliminary high-flow treatment ensures that the majority of etching work is completed when treatment liquid is most effective, while subsequent reduced supply maintains treatment liquid consumption at lower levels without significantly compromising overall etching efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reactivity between the treatment liquid and substrate, improving the etching efficiency and treatment rate by adjusting flow and temperature conditions, thereby improving the overall substrate treatment process.
Implementation Method 1
a heating member to heat the substrate positioned on the support member
Implementation Method 2
a treatment liquid nozzle to supply a treatment liquid to the substrate positioned on the support member
Data Source
AI summary
A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a support member to support a substrate, a treatment liquid nozzle to supply a treatment liquid to the substrate positioned on the support member, and a controller to control the treatment liquid nozzle such that the treatment liquid supplied to the substrate is differently discharged in a low-flow-supply section and a high-flow-supply section in which an average discharge amount per hour is more than an average discharge amount per hour in the low-flow-supply section.