Semiconductor Substrate Treatment with Rotating Stage and Tapered Gas Discharger
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Solution Overview
Problem
In semiconductor device manufacturing, non-uniform plasma generation in film formation processes leads to uneven radical density distribution, resulting in poor film coverage on the substrate.
Innovation Solution
A substrate treatment apparatus with a chamber, stage, gas discharger, plasma generator, and rotation mechanism is used, where the plasma generator is positioned above the substrate, and the gas discharger discharges film formation gas uniformly, with a tapered design of discharge ports to enhance gas directivity and flow rate, ensuring uniform plasma generation and radical distribution across the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma is generated in the chamber using conventional methods, then film formation can be achieved, but non-uniform plasma generation occurs leading to poor film coverage
Solution Approach 1:
The gas discharger is divided into multiple independent gas supply units, each with separate gas supply paths and discharge ports positioned at different locations. This segmentation allows independent control of plasma generation at each region, enabling uniform plasma distribution across the substrate surface and resolving the non-uniform plasma generation problem.
Solution Approach 2:
Each gas supply unit is configured with specific discharge ports positioned at optimized locations and angles relative to the substrate. The gas discharge characteristics are locally optimized for each region to ensure uniform plasma generation across different areas of the substrate, directly addressing the film coverage uniformity issue.
2Manufacturing precision
If gas discharge ports are designed with standard geometry, then manufacturing is simplified, but gas directivity and flow rate uniformity deteriorate
Solution Approach 1:
The discharge ports are designed with asymmetric tapered geometries where the inner diameter varies along the length of the port. Specifically, the discharge ports have different inner diameters at different positions, creating asymmetric flow characteristics that compensate for pressure distribution variations and achieve uniform gas flow rates across all discharge ports despite their different locations.
3Manufacturing precision
If multiple gas supply units are added to improve plasma uniformity, then film coverage improves, but device complexity increases
Solution Approach 1:
The multiple gas supply units share common structural components including the chamber, stage, and control systems. Each gas supply unit is designed with identical basic structure but positioned at different locations, allowing the system to achieve uniform plasma generation through replication of a standardized module rather than designing complex unique structures for each region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures uniform film thickness and improved coverage by uniformly generating plasma and radicals across the substrate, enhancing the film formation process and allowing for precise control over film formation regions.
Implementation Method 1
The plasma generator generates plasma in the chamber during discharge of the film formation gas
Data Source
AI summary
A substrate treatment apparatus according to an embodiment of the present invention includes a chamber, a stage, a gas discharger, a plasma generator, and a rotation mechanism. The stage supports a semiconductor substrate in the chamber. The gas discharger discharges a film formation gas toward the semiconductor substrate from a position opposing the stage. The plasma generator is provided on the gas discharger and generates plasma in the chamber during discharge of the film formation gas. The rotation mechanism rotates the stage during generation of the plasma.