Substrate Treatment for Selective High-k Dielectric Deposition
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Solution Overview
Problem
Existing substrate processing methods are inefficient in selectively forming additional thin film layers on specific thin film layers due to the need for etching processes, which is exacerbated by the miniaturization and thinning of semiconductor devices and display apparatuses.
Innovation Solution
A method involving plasma treatment with fluorine, selective adsorption of a high-k dielectric material, and selective deposition to form a high-k dielectric layer only on electrode layers, omitting the need for etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a deposition process is performed to form a third thin film layer all over the first and second thin film layers, then the third thin film layer is formed uniformly, but an additional etching process is required to remove the layer from the second thin film layer, reducing process efficiency
Solution Approach 1:
The patent applies preliminary action by performing plasma treatment on the substrate before deposition to modify surface properties. The plasma treatment creates different surface characteristics on the first and second thin film layers, enabling selective adsorption during subsequent deposition. This preliminary surface modification allows the third thin film layer to be deposited selectively on only the first thin film layer without requiring subsequent etching, thus resolving the contradiction between uniformity and process efficiency.
Solution Approach 2:
The patent applies local quality by creating different surface properties on different regions of the substrate through plasma treatment. The first thin film layer receives plasma treatment that enhances its adsorption properties, while the second thin film layer maintains different surface characteristics. This local differentiation enables selective deposition of the third thin film layer on specific regions, eliminating the need for etching processes and improving productivity while maintaining precise control over film formation.
2Manufacturing precision
If an etching process is repeated to etch only a portion of the third thin film layer, then selective formation is achieved, but process time increases and productivity decreases
Solution Approach 1:
The patent performs plasma treatment as a preliminary action before deposition to create selective surface properties. This preliminary modification of surface characteristics enables the deposition process itself to achieve selectivity, eliminating the need for subsequent etching operations. The plasma treatment prepares the surfaces in advance so that the third thin film layer adsorbs selectively on the intended region during deposition, thereby reducing process time while maintaining manufacturing precision.
Solution Approach 2:
The patent extracts the etching process from the manufacturing sequence by using plasma treatment and selective adsorption to achieve selective deposition directly. Instead of depositing the layer everywhere and then removing unwanted portions through etching, the method extracts the unnecessary removal step by enabling selective formation from the beginning through surface property modification, thus reducing process time and improving productivity.
3Length of moving object
If the substrate is miniaturized and thinned, then device performance improves, but the problem of reduced process efficiency becomes more severe
Solution Approach 1:
The patent applies local quality by using plasma treatment to create distinct surface properties on different thin film layers. This local differentiation of surface characteristics enables selective deposition even on miniaturized and thinned substrates. The plasma treatment modifies surface energy and chemistry locally, allowing the deposition process to distinguish between different regions and deposit material selectively, thereby maintaining process efficiency despite device miniaturization.
Solution Approach 2:
The patent applies parameter changes by modifying surface properties through plasma treatment before deposition. The plasma process changes surface energy, roughness, and chemical composition parameters of the thin film layers, creating conditions for selective adsorption. These parameter changes enable selective deposition on miniaturized substrates without requiring additional etching steps, thus maintaining productivity while accommodating device miniaturization and thinning requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances process efficiency by preventing the formation of high-k dielectric layers on insulation layers, reducing process time and increasing productivity by forming the high-k dielectric layer only on electrode layers.
Implementation Method 1
a plasma treatment step of performing plasma treatment on the substrate by using a processing gas including fluorine (F)
Implementation Method 2
a selective adsorption step of injecting a source gas including a high-k dielectric material onto a substrate on which the plasma treatment step has been performed
Implementation Method 3
a selective deposition step of injecting a reactant gas onto a substrate, on which the selective adsorption step has been performed, to deposit a high-k dielectric layer onto only the electrode layer
Data Source
AI summary
The present inventive concept relates to a method for treatment of a substrate having an insulating layer and an electrode layer formed thereon, the method comprising: a plasma treatment step of treating the substrate with plasma by using treatment gas containing fluorine (F); a selective adsorption step of spraying the substrate, subjected to the plasma treatment step, with source gas containing a high-k material to adsorb the high-k material only on the electrode layer; and a selective deposition step of spraying the substrate, subjected to the selective adsorption step, with reaction gas to deposit a high-k layer only on the electrode layer.