Substrate Treatment Apparatus for Warpage Control

The patent applies local quality by creating non-uniform film thickness distribution across the wafer surface. The film thickness is intentionally made thicker at the center and thinner at the edges (or vice versa depending on warpage direction) to generate localized stress patterns that counteract warpage while maintaining manufacturing precision. This selective variation in film properties allows simultaneous achievement of wafer stability and conveyance accuracy.

The patent utilizes parameter changes by modifying the film thickness parameter across different regions of the wafer. By controlling the deposition process to create gradient thickness profiles, the stress characteristics of the film are changed locally, enabling the film to exert differential stresses that correct warpage without causing misalignment during subsequent manufacturing steps.

The patent employs local quality by creating spatially varying film thicknesses that generate differentiated stress distributions. Instead of uniform thickness, the film is deposited with controlled thickness variations in different radial and angular directions, enabling the generation of complex stress patterns capable of counteracting multi-directional warpage components simultaneously.

The patent applies asymmetry by intentionally creating non-uniform, asymmetric film thickness distributions tailored to the specific warpage profile. The film deposition pattern is designed to be asymmetric relative to the wafer center, with thickness gradients oriented to produce stress components in multiple directions, thereby achieving effective warpage correction that symmetric uniform films cannot provide.