Repairable Substrate Via Filling With Low-Melting Crack Filler
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Solution Overview
Problem
Conventional substrate via filling processes result in cracks due to uneven substrate residue removal and varying thermal properties, leading to increased resistance and unreliability in electrical signal transmission.
Innovation Solution
Implementing a substrate with a first conductive material having a lower melting point than the via material, which can be heated to fill cracks without damaging the substrate, and a second conductive material to maintain electrical coupling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional substrate via filling processes are used, then the via can be filled with conductive material, but cracks occur due to uneven substrate residue removal and varying thermal properties
Solution Approach 1:
The patent divides the via filling process into multiple stages: first removing substrate residue, then filling with conductive material, and finally performing a second residue removal. This segmented approach ensures uniform filling without cracks by addressing different issues at appropriate stages, resolving the contradiction between filling uniformity and transmission reliability
Solution Approach 2:
The patent performs preliminary substrate residue removal before via filling to prevent uneven thermal properties that would cause cracks. By preparing the substrate surface in advance, the filling process achieves uniformity without compromising the reliability of electrical signal transmission
2Ease of repair
If high temperature heating is applied to fill cracks, then crack filling is achieved, but the substrate and via material are damaged
Solution Approach 1:
The patent introduces a repair conductive material with specific local properties (lower melting point than via material) positioned only where needed for crack filling. This localized material with tailored thermal characteristics enables crack repair at lower temperatures, preserving substrate and via material strength while maintaining repair capability
Solution Approach 2:
The patent changes the thermal parameter (melting point) of the conductive material used for crack repair, selecting a material with a lower melting point than the via material. This parameter change allows selective melting and filling of cracks without damaging the substrate or via structure, resolving the contradiction between repair ease and structural strength
3Reliability
If uniform substrate residue removal is achieved, then crack formation is prevented, but the process complexity increases
Solution Approach 1:
The patent segments the residue removal process into distinct stages: pre-filling residue removal and post-filling residue removal. This segmentation achieves uniform substrate preparation that prevents cracks and ensures reliable electrical signal transmission, while organizing the complexity into manageable, sequential steps rather than a single complex operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively repairs cracks by filling them with a lower-melting-point conductive material, ensuring reliable electrical signal transmission and substrate integrity.
Implementation Method 1
a first conductive material having a lower melting point than the via material is disposed at a crack in the substrate via
Implementation Method 2
the first conductive material is heated to a temperature effective to melt the first conductive material and fill the crack
Data Source
AI summary
A semiconductor device assembly is provided. The assembly includes a substrate having a first layer with a first contact and a second layer with a second contact. A via that includes a first conductive material electrically couples the first contact and the second contact. A second conductive material having a lower melting point than the first conductive material is disposed at least partially between the via and the second contact. When a crack occurs between the via and the second contact, the second conductive material may be heated to fill the crack. Thus, the techniques, apparatuses, and systems disclosed herein may provide a repairable substrate.


