Substrate Processing Apparatus Vacuum Ultraviolet Roughness Control
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Solution Overview
Problem
In semiconductor device manufacturing, the roughness of resist patterns on substrates poses challenges during etching, as existing techniques to improve roughness can alter the overall shape of the pattern, making it unsuitable as a mask.
Innovation Solution
A substrate processing apparatus and method that involves depressurizing a process container to 1 Pa or lower and irradiating the substrate with vacuum ultraviolet light, controlling the depressurization rate to 250 Pa/sec or lower, and using an inert gas like argon to maintain pressure, thereby improving surface roughness while preserving the pattern shape.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the interior of the process container is rapidly depressurized to form a vacuum atmosphere for VUV light irradiation, then the roughness of the resist pattern surface is improved, but the overall shape of the resist pattern changes due to rapid pressure change
Solution Approach 1:
The patent applies dynamics by controlling the depressurization rate dynamically. The depressurization is performed at a controlled rate of 250 Pa/sec or lower, transforming the static vacuum state into a dynamically controlled pressure transition process. This allows the system to achieve the desired vacuum state for VUV irradiation while managing the rate of pressure change to prevent resist pattern deformation.
Solution Approach 2:
The patent changes the pressure parameter from atmospheric pressure to vacuum pressure (1 Pa or lower) to enable VUV light irradiation for roughness improvement. By controlling this parameter change at a rate of 250 Pa/sec or lower, the patent achieves the necessary pressure condition while preventing harmful effects on the resist pattern shape.
2Manufacturing precision
If vacuum ultraviolet light is irradiated to improve surface roughness, then the surface quality is enhanced, but the process requires complex vacuum control and pressure management
Solution Approach 1:
The patent employs feedback control by monitoring the internal pressure of the process container and adjusting the depressurization rate accordingly. The controller receives pressure information and regulates the pressure change rate to remain at 250 Pa/sec or lower, ensuring consistent and controlled vacuum conditions for VUV irradiation while automating the complex pressure management.
3Productivity
If the depressurization rate is increased to reduce processing time, then productivity is improved, but the resist pattern shape changes due to rapid pressure change
Solution Approach 1:
The patent applies preliminary action by establishing the controlled depressurization rate condition before VUV light irradiation begins. The pressure is reduced at a controlled rate of 250 Pa/sec or lower prior to and during the irradiation process, ensuring that the resist pattern is already in a stable state before the surface modification treatment starts, thereby preventing shape changes while maintaining efficient processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces surface roughness and prevents changes in the overall shape of the resist pattern, ensuring it functions effectively as a mask during etching.
Implementation Method 1
irradiating the substrate with a vacuum ultraviolet light after the interior of the process container is depressurized so that an internal pressure of the process container reaches a pressure of 1 Pa or lower
Implementation Method 2
a depressurization mechanism configured to perform a pressure-decreasing process of depressurizing an interior of the process container to have a pressure of 1 Pa or lower
Data Source
AI summary
There is provided a substrate processing apparatus, including: a mounting table configured to mount a substrate with a pattern mask formed on the substrate inside a process container; a depressurization mechanism configured to perform a pressure-decreasing process of depressurizing an interior of the process container to have a pressure of 1 Pa or lower; a light irradiation mechanism configured to irradiate the substrate with a vacuum ultraviolet light after the interior of the process container is depressurized so that an internal pressure of the process container reaches a pressure of 1 Pa or lower; and a controller configured to output a control signal such that an average depressurization rate inside the process container performed by the depressurization mechanism becomes 250 Pa/sec or lower while the interior of the process container is depressurized from 10,000 Pa to 1 Pa.