Semiconductor Substrate Warpage Control via Simultaneous Oxidation

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Solution Overview

Problem

Semiconductor substrates experience significant warpage due to uneven oxidation of their surfaces and backs during heat treatment, leading to processing challenges and potential defects.

Innovation Solution

A semiconductor manufacturing apparatus that simultaneously oxidizes the surface and back of a semiconductor substrate using a light source, a lid member, and oxidation-resistant materials, with controlled gas introduction and temperature management to prevent warpage by ensuring uniform heating and oxidation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If only the surface of the semiconductor substrate is oxidized, then the oxidation process is simple and fast, but the surface side becomes thick and warpage increases

Engineering Contradiction:

Improveoxidation process speedVSAvoidsubstrate warpage

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The oxidation process is segmented into two independent stages: first oxidizing the surface, then oxidizing the back surface. This segmentation allows each oxidation zone to be independently controlled, preventing the warpage issue that would result from thickening only one side while maintaining efficient processing speed.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the substrate receive different treatment: the surface undergoes oxidation first, then the back surface undergoes oxidation. This local quality approach ensures that both sides of the substrate have uniform thickness after processing, eliminating warpage while maintaining overall process efficiency.

Inventive Principle:

Principle #3Local quality

2Manufacturing precision

If the back surface is oxidized, then uniform thickness is achieved, but additional processing time is required

Engineering Contradiction:

Improvesubstrate thickness uniformityVSAvoidtotal processing time

Core Design Contradiction:

Manufacturing precisionVSLoss of time

Solution Approach 1:

The oxidation process continues without interruption by immediately transitioning from surface oxidation to back surface oxidation within the same chamber. This continuous useful action eliminates idle time between operations while achieving uniform thickness, thereby reducing total processing time despite the additional oxidation step.

Inventive Principle:

Principle #20Continuity of useful action

Solution Approach 2:

Both surface and back surface oxidation operations are merged into a single processing cycle within one chamber. By combining these operations and eliminating the need for intermediate handling or separate chamber transfers, the total processing time is minimized while achieving the desired thickness uniformity.

Inventive Principle:

Principle #5Merging (Combining)

3Use of energy by moving object

If a light source is used for heating, then heating efficiency is improved, but the risk of foreign object adherence increases

Engineering Contradiction:

Improveheating efficiencyVSAvoidforeign object adherence

Core Design Contradiction:

Use of energy by moving objectVSObject-affected harmful factors

Solution Approach 1:

An inert atmosphere is maintained in the chamber during light source heating to prevent oxidation and foreign object adherence. The inert environment protects the substrate and internal components from harmful reactions while allowing the light source to efficiently heat the substrate for oxidation processing.

Inventive Principle:

Principle #39Inert atmosphere (Inert environment)

Solution Approach 2:

The inert gas acts as an intermediary between the light source and the substrate, creating a protective environment that prevents foreign object adherence while allowing thermal energy to be effectively transferred to the substrate for oxidation.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus effectively suppresses warpage by allowing for simultaneous oxidation of both surfaces, reducing processing time and minimizing device modifications, while preventing foreign object adherence and maintaining efficient heat utilization.

Implementation Method 1

a light source

Methodology Applied

Scientific EffectLight: Light

Implementation Method 2

oxidizes a surface of a semiconductor substrate

Methodology Applied

Scientific EffectOxidation: Oxidation

Data Source

PatentUS10559479B2Semiconductor manufacturing apparatus and manufacturing method of semiconductor device

Publication Date: 2020.02.11 KIOXIA CORP

AI summary

A semiconductor manufacturing apparatus according to an embodiment comprises: a lid member; a support member; an oxidation resistant member; and an oxidizing system gas introducing member. The lid member is opposed to a surface of a semiconductor substrate. The support member supports the lid member. The oxidation resistant member is opposed to a back of the semiconductor substrate. The oxidizing system gas introducing member introduces an oxidizing system gas that oxidizes the back of the semiconductor substrate.