Sulfonic Acid Polymer Surface Treatment for Semiconductor Substrate Cleaning
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Solution Overview
Problem
Existing surface treatment compositions for semiconductor substrates after chemical mechanical polishing (CMP) are inadequate in removing organic residues from silicon nitride, silicon oxide, and polysilicon surfaces, leading to potential device failure due to residual contamination.
Innovation Solution
A surface treatment composition containing a polymer compound with a sulfonic acid group, used under acidic conditions, effectively removes organic residues by electrostatic and hydrophobic interactions, with a pH value of less than 7 and a high concentration of the polymer compound, ensuring thorough cleaning of silicon nitride, silicon oxide, and polysilicon surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional cleaning composition containing polycarboxylic acid or hydroxycarboxylic acid is used, then the cleaning process can be performed without corroding the substrate surface, but organic residues cannot be sufficiently removed from silicon nitride, silicon oxide, or polysilicon surfaces
Solution Approach 1:
The invention changes the chemical parameters of the cleaning composition by introducing a polymer compound with sulfonic acid groups and maintaining a low pH value (less than 7), which fundamentally alters the cleaning mechanism to enable effective removal of organic residues while preserving substrate integrity
Solution Approach 2:
The cleaning composition combines multiple components including a polymer compound with sulfonic acid groups, water, and optionally other acids or surfactants, creating a composite formulation that synergistically removes organic residues without damaging the substrate surface
2Object-generated harmful factors
If the pH value of the surface treatment composition is increased to enhance cleaning power, then organic residues can be removed more effectively, but substrate corrosion risk increases
Solution Approach 1:
The invention maintains a low pH value (less than 7) while achieving effective organic residue removal through the specific chemical properties of the polymer compound with sulfonic acid groups, which provides strong cleaning power without requiring high pH conditions that would cause substrate corrosion
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition significantly improves the removal of organic residues, preventing device failure by effectively charging and repelling contaminants from the substrate surfaces, enhancing the reliability of semiconductor devices.
Implementation Method 1
a surface treatment composition contains a polymer compound having a sulfonic acid (salt) group under an acidic condition
Implementation Method 2
The composition significantly improves the removal of organic residues, preventing device failure by effectively charging and repelling contaminants from the substrate surfaces
Data Source
AI summary
The present invention provides a means for sufficiently removing organic residues remaining on the surface of an object to be polished which contains silicon nitride, silicon oxide, or polysilicon and has been polished. The present invention relates to a surface treatment composition including a polymer compound having a sulfonic acid (salt) group and water, wherein the surface treatment composition has a pH value of less than 7 and the surface treatment composition is used for decreasing an organic residue on a surface of an object to be polished which contains silicon nitride, silicon oxide, or polysilicon and has been polished.