Sulfur-Doped Copper Sputtering Target Assembly With Uniform Alloy Distribution
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Solution Overview
Problem
Existing methods for producing copper-sulfur sputtering targets fail to achieve high purity and uniform alloy distribution, leading to mechanical instability and defects that render the targets unsuitable for semiconductor and integrated circuit applications.
Innovation Solution
A method involving the selection of high-purity copper and sulfur raw materials, followed by vacuum induction melting to form a molten alloy, casting to produce an ingot with uniform sulfur distribution, and thermomechanical processing to create a sputtering target blank with a predetermined sulfur concentration range and mechanical stability, which is then joined to a backing plate to form a sputtering target assembly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional melting and casting methods are used to produce copper-sulfur sputtering targets, then production cost and time are reduced, but the targets exhibit non-uniform sulfur distribution and low purity leading to mechanical instability and defects
Solution Approach 1:
The production process is divided into distinct sequential stages: vacuum induction melting to achieve high purity (99.999% or higher), controlled casting to establish uniform sulfur distribution, and thermomechanical processing to achieve desired mechanical properties. Each stage is optimized independently to ensure cumulative achievement of uniformity and purity requirements without excessive overall complexity
Solution Approach 2:
The patent applies specific parameter ranges to resolve the contradiction: sulfur concentration is controlled within 0.35-0.65 wt% with variance ≤15%, thermomechanical processing temperature is maintained at 700-850°C, and overall strain is controlled at 70-90%. These precise parameter specifications ensure uniform sulfur distribution and high purity while maintaining a manageable process complexity through defined operating windows
2Manufacturing precision
If high-purity raw materials and precise thermomechanical processing are used, then sulfur distribution uniformity and purity reach 99.999 wt % or higher, but production time and cost increase
Solution Approach 1:
High-purity copper (99.999% or higher) and sulfur raw materials are selected before the melting process to minimize contamination risks from the outset. The vacuum induction melting is performed under controlled vacuum conditions to prevent oxidation and impurity introduction during melting, establishing high purity early in the process before casting and thermomechanical processing
Solution Approach 2:
The production process maintains continuous controlled conditions through vacuum induction melting followed by immediate casting under the same vacuum environment, then proceeds to thermomechanical processing without exposing the material to atmospheric contamination. This continuous controlled action preserves purity throughout the manufacturing sequence, achieving 99.999% or higher purity without requiring lengthy intermediate processing steps
3Reliability
If uniform sulfur distribution is achieved through controlled casting and thermomechanical processing, then mechanical stability is enhanced, but manufacturing complexity and process control difficulty increase
Solution Approach 1:
The patent applies localized quality control through controlled casting parameters that ensure uniform sulfur distribution throughout the ingot volume, followed by thermomechanical processing at specific temperature ranges (700-850°C) to achieve desired microstructure and mechanical properties in the final target. This localized optimization of different process regions ensures mechanical stability without requiring complex overall process control
Solution Approach 2:
The patent implements feedback control by specifying precise measurement criteria: sulfur concentration variance ≤15% from the mean value of 0.35-0.65 wt%, and overall strain control at 70-90% during thermomechanical processing. These quantitative feedback parameters enable consistent achievement of mechanical stability while maintaining manageable process control through defined acceptance criteria
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves sputtering targets with a purity of 99.999 wt % or higher, uniform sulfur distribution, and enhanced mechanical stability, enabling the production of high-quality thin films for semiconductor applications without defects or fractures.
Implementation Method 1
the raw materials are melted by vacuum induction melting
Implementation Method 2
melting the raw materials to produce a molten alloy
Implementation Method 3
applying thermomechanical processing at a predetermined temperature to the ingot to produce a sputtering target blank
Implementation Method 4
the predetermined temperature of the thermomechanical processing is between about 700-850° C
Data Source
AI summary
Provided are copper and copper alloy sputtering targets and sputtering target assemblies, including copper-sulfur sputtering targets, and systems and methods thereof. The copper and copper alloy sputtering targets, including copper-sulfur sputtering targets may have one or more (or all) of the following properties: high purity, uniform composition and distribution, increased or requisite mechanical stability to provide joining mechanisms, and the like. In an embodiment, the sulfur-doped copper alloy compositions and sputtering targets may have a purity of 99.999 wt % or more and/or a uniform composition of sulfur up to 5 wt %.