Sulfurane Acid Diffusion Inhibitor for Resist LWR Reduction
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Solution Overview
Problem
Current resist materials face challenges in forming desired patterns at smaller sizes due to acid diffusion, leading to degradation in contrast, line width roughness (LWR), and critical dimension uniformity (CDU), especially as patterns approach the diffusion length of acid, necessitating improved acid diffusion inhibitors for advanced miniaturization in lithography.
Innovation Solution
A resist composition incorporating a sulfurane or selenurane compound with a specific structure, which acts as an effective acid diffusion inhibitor, is used in combination with a base polymer containing acid labile groups and a photoacid generator, enhancing LWR and CDU during high-energy radiation lithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional acid diffusion inhibitors (amines or weak acid onium salts) are used, then pattern formation is achieved, but line width roughness (LWR) and critical dimension uniformity (CDU) deteriorate as pattern size approaches acid diffusion length
Solution Approach 1:
The patent changes the chemical parameters of the acid diffusion inhibitor by using sulfurane or selenurane compounds with specific structures (formula 1) instead of conventional amines or weak acid onium salts. This parameter change in the inhibitor's chemical nature and structure enables superior acid diffusion control, achieving reduced LWR and CDU while maintaining pattern formation quality at advanced miniaturization nodes.
Solution Approach 2:
The resist composition employs a composite approach by combining the sulfurane or selenurane compound (acid diffusion inhibitor) with specific base polymers containing acid-labile groups and photoacid generators. This composite material system synergistically achieves both effective acid diffusion inhibition and desired pattern formation properties that neither component could achieve alone.
2Productivity
If pattern size is reduced for advanced miniaturization, then integration density and operating speed improve, but acid diffusion becomes more detrimental causing contrast degradation and LWR increase
Solution Approach 1:
The sulfurane or selenurane compound acts as a preliminary anti-action by preemptively suppressing acid diffusion before it can cause detrimental effects. The compound is positioned in the resist composition to intercept and neutralize acid diffusion at its source, preventing the propagation of acid that would otherwise cause contrast degradation and LWR increase in miniaturized patterns.
Solution Approach 2:
The acid diffusion inhibitor functions as an intermediary substance between the photoacid generator and the pattern-forming process. It mediates the acid diffusion process by capturing and neutralizing diffusing acid, thereby protecting the pattern formation from acid-induced degradation while allowing the desired lithographic effects to proceed.
3Measurement precision
If existing acid diffusion inhibitors are used, then some LWR and CDU improvement is achieved, but satisfactory performance for narrower pitch patterns in advanced miniaturization is not attained
Solution Approach 1:
The patent achieves superior performance for narrower pitch patterns by fundamentally changing the parameters of the acid diffusion inhibitor - using sulfurane or selenurane compounds with specific structural features (formula 1) that provide enhanced acid diffusion control compared to conventional inhibitors, enabling satisfactory LWR and CDU at advanced miniaturization nodes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition achieves improved pattern formation with reduced LWR and CDU, providing high resolution and contrast, and is suitable for high-accuracy micropatterning, addressing the limitations of existing acid diffusion inhibitors.
Implementation Method 1
As the pattern size is approaching the diffusion length of acid, the influence of acid diffusion becomes more detrimental to the pattern formation after exposure
Implementation Method 2
a photoacid generator
Data Source
AI summary
A resist composition is provided comprising (A) a sulfurane or selenurane compound, (B) an organic solvent, and (C) a base polymer comprising repeat units having an acid labile group. By virtue of the acid diffusion inhibitory function of the compound, the resist composition forms a resist pattern having improved LWR and CDU when it is processed by lithography using high-energy radiation.