Super-junction Semiconductor Device via Ion Implantation
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Solution Overview
Problem
Conventional methods for forming super-junction structures in semiconductor devices face challenges such as difficulty in uniformly controlling trench depth, variations in specific resistance, and increased process time and cost, which affect the formation of MOS structures.
Innovation Solution
The use of thermal donors formed by selectively irradiating H+ particles and subsequent annealing to create n-type column regions, allowing for precise control and efficient formation of super-junction structures without altering the basic MOS structure, reducing on-resistance and increasing breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dry-etching is used to form stripe-shaped trenches for super-junction structure, then the structure can be formed, but it is difficult to uniformly control trench depth
Solution Approach 1:
The patent replaces the mechanical dry-etching process with ion implantation to form the super-junction structure. By implanting ions (such as boron) into the semiconductor substrate to create p-type regions alternating with n-type regions, the method achieves uniform depth control through precise ion energy selection, eliminating the depth uniformity issues inherent in dry-etching processes.
Solution Approach 2:
The patent changes the formation parameter from etch depth control to ion implantation energy control. By adjusting the ion implantation energy, the depth and concentration of the implanted regions can be precisely controlled, achieving uniform super-junction structure formation without the difficulties of trench depth control in dry-etching.
2Manufacturing precision
If conventional methods are used to form super-junction structure, then the structure can be formed, but variations in specific resistance occur
Solution Approach 1:
The patent replaces conventional formation methods with ion implantation to achieve precise control over the electrical properties of the super-junction structure. By controlling ion implantation dose and energy, the specific resistance can be uniformly adjusted across the entire structure, eliminating variations that affect device performance consistency.
Solution Approach 2:
The patent employs process control mechanisms where the ion implantation parameters are precisely monitored and adjusted to achieve the desired specific resistance. Through feedback control of implantation conditions, uniform electrical properties are achieved across all regions of the super-junction structure.
3Productivity
If conventional super-junction formation methods are used, then the structure can be formed, but process time increases
Solution Approach 1:
The patent replaces multi-step conventional formation processes with a single ion implantation step to create the super-junction structure. This direct formation method eliminates the need for sequential processing steps, dramatically reducing the overall formation time while maintaining structure quality.
Solution Approach 2:
The patent skips intermediate processing steps by directly forming the super-junction structure through ion implantation. Instead of proceeding through multiple sequential operations, the method achieves rapid structure formation in a single implantation process, significantly reducing manufacturing cycle time.
4Productivity
If conventional super-junction formation methods are used, then the structure can be formed, but manufacturing cost increases
Solution Approach 1:
The patent replaces complex conventional formation methods with ion implantation, which is a well-established and cost-effective technique in semiconductor manufacturing. This substitution simplifies the process flow and reduces equipment requirements, leading to lower manufacturing costs while maintaining high formation efficiency.
Solution Approach 2:
The patent eliminates unnecessary intermediate steps in the formation process, achieving direct creation of the super-junction structure through ion implantation. This streamlined approach reduces process complexity and associated costs while maintaining productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of super-junction structures in a short period and at low cost, with precise control over n-type column region formation, minimizing variations in specific resistance and facilitating miniaturization of semiconductor devices.
Implementation Method 1
selectively irradiating H+ particles on a plurality of portions of the semiconductor layer
Implementation Method 2
subjecting the irradiated portions to annealing
Data Source
AI summary
A semiconductor device includes a p-type semiconductor layer, n-type column regions formed of columnar thermal donors exhibiting an n-type property, a p-type column region interposed between the n-type column regions, the n-type column regions configured to form a super-junction structure in cooperation with the p-type column region, a channel region formed in the semiconductor layer, a source region formed in the channel region, a gate insulator film formed on the semiconductor layer, and a gate electrode formed on the gate insulator film and opposite to the channel region across the gate insulator film.