Super Junction Termination for High Voltage Semiconductor Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
High voltage semiconductor devices face challenges in maintaining effective electrical isolation and voltage distribution, particularly with the presence of Super Junction structures in the drift region, which can alter the carefully engineered field distribution and potentially lead to breakdowns at the edges of doped regions.
Innovation Solution
Incorporating a Super Junction structure in the termination region, which comprises alternating p and n layers, helps to manage the electric field by releasing it at the edges of the doped portions into the termination region, using techniques such as junction termination extension, islands isolation, and field plates to control and shape the electric field distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a Super Junction structure is present in the drift region, then the voltage carrying capability is improved, but the field distribution is altered and breakdown may occur at the edges of doped regions
Solution Approach 1:
The termination region is segmented into multiple alternating p-type and n-type doped regions (super junction structure) that extend from the drift region. This segmentation creates a distributed charge compensation mechanism that maintains improved voltage carrying capability while controlling field distribution at the edges of doped regions through the alternating polarity structure.
Solution Approach 2:
The super junction structure implements local quality by creating regions with different doping polarities (p-type and n-type) in specific locations within the termination region. This allows the electric field to be managed locally at the edges of doped regions through charge compensation between adjacent opposite-polarity regions, preventing breakdown while maintaining overall voltage carrying capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the voltage carrying capability of the device, prevents breakdowns, and ensures that the full voltage rating of the high voltage device is realized by effectively managing the electric field distribution and increasing the field pressure at the edges of the doped portions.
Implementation Method 1
the at least one termination portion comprises a Super Junction structure... helps to manage the electric field by releasing it at the edges of the doped portions into the termination region
Data Source
AI summary
A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes at least one termination portion provided adjacent to the drift portion. The at least one termination portion comprises a Super Junction structure.