Super Junction Semiconductor Transition Area Electric Field
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Solution Overview
Problem
Conventional super junction semiconductor devices face challenges in achieving stable breakdown voltage due to difficulties in maintaining consistent electric fields across different cell areas, leading to unstable voltage breakdown.
Innovation Solution
Incorporating a transition area between the cell and junction termination areas, with specific design features such as varying pillar region widths and the presence of a P-type pillar extension region, to create a buffer for voltage drop and balance electric fields, thereby stabilizing breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional super junction semiconductor device is designed with cell area and junction termination area, then the device can control current and maintain breakdown voltage, but the breakdown voltage becomes unstable
Solution Approach 1:
The device structure is segmented into three distinct areas: cell area, transition area, and junction termination area. The transition area is further divided into multiple regions with progressively decreasing unit cell widths. This segmentation allows each area to perform its specific function while collectively achieving stable breakdown voltage through controlled electric field distribution.
Solution Approach 2:
Different regions of the device are designed with different unit cell widths to create local variations in electric field strength. The transition area contains regions with intermediate unit cell widths between the cell area and junction termination area, creating a gradual electric field transition that prevents sudden voltage breakdown and enhances reliability.
2Reliability
If the unit cell width is uniform across all areas, then the device structure is simple, but the electric field distribution is inconsistent leading to unstable breakdown voltage
Solution Approach 1:
The unit cell width parameter is systematically varied across different regions of the device. The transition area contains multiple regions with unit cell widths that progressively decrease from the cell area toward the junction termination area. This parameter variation creates a controlled gradient in electric field strength, ensuring stable breakdown voltage while maintaining manufacturing feasibility through defined width ratios between adjacent regions.
Data Source
AI summary
There is provided a super junction semiconductor device. The super junction semiconductor device includes a cell area and a junction termination area disposed on a substrate, and a transition area disposed between the cell area and the junction termination area, and the cell area, the junction termination area, and the transition area each include one or more unit cells comprising a N-type pillar region and a P-type pillar region among a plurality of N-type pillar regions and a P-type pillar regions that are alternated between the cell area and the junction termination area.