Super Via Thermal Channel for Backside Heat Dissipation
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Solution Overview
Problem
Heat dissipation in semiconductor devices becomes challenging as transistor density increases, and existing heat sinks alone may exacerbate temperature issues without proper thermal conductivity design.
Innovation Solution
A semiconductor device with a thermal conductivity channel comprising a frontside super via and a backside super via connected by a contact, forming a thermal conductivity channel that extends from the frontside to the backside, enhancing heat dissipation through high-conductive materials and acting as a capacitor electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heat sink is used to dissipate heat, then heat dissipation capability is improved, but additional problems occur without proper thermal conductivity design
Solution Approach 1:
The patent divides the thermal management function into multiple thermal conductivity channels distributed across the substrate, with each channel containing segmented thermal conductors at different locations. This segmentation allows heat to be dissipated through multiple parallel paths, improving overall heat dissipation capability while maintaining manageable design complexity through modular thermal management units.
Solution Approach 2:
The patent implements local thermal conductivity enhancement by placing specific thermal conductors at strategically selected locations throughout the substrate. Each thermal conductor is positioned to address local heat generation points, creating non-uniform thermal conductivity distribution that optimizes heat dissipation where needed most without requiring complex global thermal management design.
2Productivity
If transistor density increases, then device performance is improved, but heat dissipation becomes more challenging
Solution Approach 1:
The patent extends thermal management from two-dimensional surface heat sinks to three-dimensional thermal conductivity channels that penetrate through the substrate thickness. By utilizing the vertical dimension with thermal conductors extending from front surface to back surface, the patent creates additional thermal dissipation pathways that scale with transistor density without proportionally increasing thermal management complexity.
Solution Approach 2:
The patent introduces thermal conductors as intermediary elements between heat generation points (transistors) and heat dissipation regions (substrate surfaces and external environments). These intermediary thermal conductors facilitate efficient heat transfer from high-density transistor regions to cooler areas, decoupling the relationship between transistor density and heat dissipation difficulty.
3Temperature
If thermal conductivity path is designed, then heat transfer rate is improved, but material selection is limited
Solution Approach 1:
The patent employs composite thermal conductor structures comprising multiple materials with different thermal conductivity properties. By combining materials such as metal traces, conductive fillers, and matrix materials, the patent achieves enhanced thermal conductivity while maintaining flexibility in material selection. The composite approach allows optimization of both thermal performance and manufacturability through versatile material combinations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The thermal conductivity channel effectively dissipates heat from transistor levels to the backside power distribution network, improving device performance by providing a controlled heat transfer path and utilizing device real estate efficiently.
Implementation Method 1
thermal conductivity channel is disposed between the back end of the line region and the backside interconnect metallization layer
Implementation Method 2
A capacitor includes the thermal conductivity channel as a first electrode and metal lines traversed by the thermal conductivity channel as a second electrode
Data Source
AI summary
A semiconductor device includes a back end of the line region on a frontside of the semiconductor device. A backside interconnect metallization layer is on a backside of the semiconductor device. A thermal conductivity channel is disposed between the back end of the line region and the backside interconnect metallization layer. The thermal conductivity channel includes a frontside super via and a backside super via connected by a contact therebetween.