Superacid Salt Doping for Hole Conductor Layers

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Solution Overview

Problem

Existing organic semiconductor devices face limitations in charge carrier density and efficiency due to restrictive dopant deposition methods and materials, which affect conductivity and service life, particularly in organic light-emitting diodes where exciton density impacts light output and efficiency.

Innovation Solution

The use of superacid salts, such as silver(I) trifluoromethanesulfonate (Ag(I)TFMS) and copper(II) trifluoromethanesulfonate (Cu(II)TFMS, as p-dopants in hole conductor layers, allowing for high conductivity at low concentrations and adjustable optical properties, enabling improved performance in organic light-emitting diodes and other semiconductor components.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional dopants are used to increase conductivity of hole conductor layers, then conductivity is improved, but processing is limited to single-phase deposition (gas or liquid) and service life is reduced

Engineering Contradiction:
Improveservice lifeVSAvoidprocessing flexibility
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent employs dopant compositions that can be deposited from both gas phase and liquid phase, making the doping process universal and adaptable to different manufacturing methods. This multi-functionality resolves the contradiction by enabling flexible processing while maintaining improved service life through optimized dopant formulations that stabilize charge carrier density at interfaces.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent changes the chemical composition parameters of the dopant system by using combinations of electron acceptors and hole导体 materials in specific ratios. This parameter optimization simultaneously improves service life through stabilized charge carrier density and enables versatile processing methods including both vapor and solution deposition.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If dopant concentration is increased to further improve conductivity, then conductivity increases, but color impression changes and optical properties deteriorate

Engineering Contradiction:
ImproveconductivityVSAvoidcolor impression
Core Design Contradiction:
ReliabilityVSIllumination intensity

Solution Approach 1:

The patent optimizes the dopant concentration parameter to a specific range that achieves sufficient conductivity improvement while minimizing optical absorption changes. By carefully controlling the dopant-to-matrix ratio and using appropriate electron acceptors, the patent maintains neutral color appearance even with enhanced doping levels.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If existing electron acceptors are used for p-doping, then hole conductor conductivity is improved, but efficiency and service life are compromised due to limited charge carrier density control

Engineering Contradiction:
Improvecharge carrier density stabilityVSAvoidefficiency
Core Design Contradiction:
ReliabilityVSPower

Solution Approach 1:

The patent uses composite dopant systems combining electron acceptors with hole导体 materials in optimized ratios. This composite approach creates a synergistic effect that stabilizes charge carrier density at interfaces while maintaining high efficiency, resolving the contradiction between reliability and power.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent applies doping locally at critical interfaces where charge carrier density control is most needed. By concentrating the dopant effect at electrode interfaces and emission regions, the patent achieves stable charge carrier density where it matters most for efficiency while avoiding excessive bulk doping that would compromise optical properties.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Superacid salts significantly increase conductivity in hole conductor layers with low dopant concentrations, maintaining a neutral color appearance and enhancing optical and electrical properties, thus improving the efficiency and longevity of organic semiconductor devices.

Implementation Method 1

The hole conductor layer has a p-doping with a super acid salt. The superacid salt comprises silver(I) trifluoromethanesulfonate (Ag(I)TFMS) and/or copper(II) trifluoromethanesulfonate (Cu(II)TFMS).

Methodology Applied
Scientific Effectp-doping: Dopants

Data Source

PatentEP2656412B1Organic semiconductor component comprising a doped hole conductor layer
Publication Date: 2020.11.18 NOVALED GMBH
  • EP2656412B1 patent drawingFigure 1
  • EP2656412B1 patent drawingFigure 2A~2D
  • EP2656412B1 patent drawingFigure 3

AI summary

An organic semiconductor component (10) comprising a hole conductor layer (20) can be greatly improved in terms of its charged transport and optical properties by means of p-type doping according to the invention with a superacid salt. Besides increasing the specific conductivity at very low doping concentrations, the novel doping brings about substantially no negative change in the colour impression of the layer for the human eye. The absorbtivity of the hole conductor layer is not increased in the visible wavelength range as a result of the p-type doping with the superacid salt. Deposition from solution and from the gas phase is possible.