Superconducting Zone Manufacturing via Segmented Buffer Layer Etching

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Solution Overview

Problem

Current manufacturing methods for electronic devices with superconducting zones are inadequate for devices thinner than 50 nanometers, as chemical etching causes rough edges and ion etching degrades the material, leading to reduced performance at elevated temperatures.

Innovation Solution

A method involving the deposition of a buffer layer with superimposed sub-layers on a substrate, followed by etching to create superconducting and insulating zones, and subsequent deposition of a superconducting layer using pulsed laser ablation or sputtering, where the superconducting material diffuses into the substrate at elevated temperatures, forming insulating zones without degrading the superconducting properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If chemical etching is used to create tracks or electrodes, then the etching process is simple and effective, but the electrode edges become rough with roughnesses comparable to the width of the tracks, risking track cutting

Engineering Contradiction:
Improveetching process simplicityVSAvoidelectrode edge roughness
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The buffer layer is segmented into multiple sub-layers with different materials and etching resistances. The first sub-layer has high etching resistance to protect the superconducting layer during etching, while the second sub-layer has lower etching resistance to be selectively removed, creating smooth electrode edges without track cutting.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The buffer layer acts as an intermediary between the substrate and the superconducting layer. It provides a protective function during etching while allowing controlled removal in specific areas, mediating between the need for simple etching and the need for precise edge definition.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If ion etching is used to create tracks or electrodes, then the etching precision is improved, but the oxygen content of the electrode edges is reduced, degrading the physical properties of the superconducting material and thus the electrical performance of the devices

Engineering Contradiction:
Improvetrack definition precisionVSAvoidelectrical performance
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The buffer layer is deposited beforehand to establish a protective barrier before the etching process begins. This preliminary action prevents ion bombardment damage to the superconducting layer while still allowing precise track definition through controlled etching of the buffer layer.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The buffer layer serves as an intermediary that absorbs the harmful effects of ion etching. It allows precise track definition to be achieved while preventing oxygen depletion and physical property degradation of the superconducting material.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Manufacturing precision

If oxygen ion irradiation is used to make superconducting wires, then the critical temperature is locally reduced through disorder production, but the devices show reduced performance when exposed to temperatures of 80° C. and above

Engineering Contradiction:
Improvecritical temperature controlVSAvoidtemperature stability
Core Design Contradiction:
Manufacturing precisionVSTemperature

Solution Approach 1:

The harmful oxygen ion irradiation step is extracted and replaced. Instead of using ion irradiation to reduce critical temperature, the patent uses controlled etching of the buffer layer followed by selective removal in the second sub-layer, achieving critical temperature control without compromising high-temperature performance.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent converts the potential harm of ion etching into a benefit by using it only on the buffer layer rather than the superconducting layer. The buffer layer absorbs the ion bombardment effects, allowing precise track definition while preserving the superconducting material's thermal stability.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

4Device complexity

If a single-layer buffer is used, then the manufacturing process is simpler, but the etching selectivity and protection of superconducting zones is insufficient

Engineering Contradiction:
Improvebuffer layer structureVSAvoidsuperconducting zone protection
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The buffer layer is divided into functionally distinct sub-layers. The first sub-layer provides high etching resistance to protect superconducting zones, while the second sub-layer provides lower etching resistance for selective removal, achieving precise zone definition through structural segmentation.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The buffer layer uses composite structure with different materials having different etching resistances. This composite approach enables differential etching behavior that protects superconducting zones while defining insulating zones with high precision.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method ensures robust electrical isolation and high-performance superconducting zones that maintain integrity at elevated temperatures, avoiding the degradation caused by traditional etching techniques and enabling the production of devices like Josephson junctions with improved temperature stability.

Implementation Method 1

the material of the substrate being a material in which at least one chemical element of the superconducting material diffuses into the material of the substrate when the two materials are in contact and heated to a temperature of 200° C. or more

Methodology Applied
Scientific EffectDiffusion: Diffusion

Implementation Method 2

depositing a second layer on the whole of the substrate portion, the second layer being of superconducting material

Methodology Applied
Scientific EffectPulsed laser ablation: Laser Ablation

Implementation Method 3

depositing a second layer on the whole of the substrate portion, the second layer being of superconducting material

Methodology Applied
Scientific EffectSputtering: Sputtering

Data Source

PatentUS20230051835A1Method for manufacturing an electronic device comprising at least one superconductive zone and associated device
Publication Date: 2023.02.16 THALES SA
  • US20230051835A1 patent drawing
  • US20230051835A1 patent drawing
  • US20230051835A1 patent drawing

AI summary

The invention relates to a method of manufacturing a device, the device comprising a superconducting zone (20) and an insulating zone (22) in an arrangement, comprising the steps of:depositing a buffer layer (12) on a portion of a substrate (10),etching the buffer layer (12) to obtain two zones (Z1, Z2), each first zone (Z1) being a zone in which the substrate (10) is covered by the buffer layer (12) and intended to form a respective superconducting zone (20), each second zone (Z2) being a zone in which the substrate (10) is exposed to form a respective insulating zone (22), anddepositing a second layer (18) of superconducting material on the entire substrate portion (10), the first layer (12) being made of at least two superimposed sub-layers (14, 16).