Superconducting Material Composition for Target Transition Temperature
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Solution Overview
Problem
Conventional band gap engineering techniques do not allow for a full range of achievable bandgap values in semiconductor materials, limiting their application in electronic devices.
Innovation Solution
The method involves controlling semiconductor fabrication process parameters, specifically the order parameter and stoichiometry, to tune the band gap across a broad range by varying nitrogen species flow rates and substrate temperatures, allowing for the design of semiconductor materials with desired band gaps without the need for alloying.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional band gap engineering techniques (alloying) are used, then band gap can be modified, but the range of achievable band gap values is limited
Solution Approach 1:
The patent changes the order parameter of the semiconductor material to tune the band gap across a broad range. By controlling the degree of ordering in the crystal structure through fabrication parameters (temperature, pressure, composition ratios), the band gap can be continuously adjusted without requiring complex alloying processes. This transforms the band gap engineering from a composition-based approach to a structural-ordering-based approach.
2Manufacturing precision
If alloying is used to engineer band gap, then desired band gap values can be achieved, but the fabrication process becomes more complex
Solution Approach 1:
The invention uses fabrication parameters (temperature, pressure, composition ratios) to control the order parameter, which in turn controls the band gap. This provides a direct and precise method for band gap engineering that simplifies the manufacturing process by eliminating the need for complex alloying while maintaining high precision in band gap control.
Solution Approach 2:
The patent establishes correlations between fabrication parameters and the order parameter before actual device fabrication. By pre-determining the relationship between processing conditions and material properties, the band gap can be precisely controlled during manufacturing without requiring complex real-time adjustments or post-processing alloying steps.
3Adaptability or versatility
If the order parameter is controlled to tune band gap, then a broad range of band gap values can be achieved, but process control complexity increases
Solution Approach 1:
The patent controls the order parameter by adjusting fabrication parameters such as temperature, pressure, and composition ratios. These are standard, well-controlled parameters in semiconductor fabrication, which means that while the band gap tunability is greatly enhanced, the actual process control complexity remains manageable using existing fabrication equipment and techniques.
Data Source
AI summary
A method of fabricating a superconducting device includes determining a target transition temperature and utilizing a predefined quantitative relationship between superconducting transition temperature and an order parameter for at least one superconducting material composition is utilized to select a superconductor material composition that is capable of providing a target transition temperature. Process parameters may be controlled to form a superconductor device comprising at least one superconductor material having a material composition providing the target transition temperature.