Superconducting Gate Formation for Low-Variability Quantum Devices
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Solution Overview
Problem
Quantum devices with superconducting qubits face variability and high energy consumption due to manufacturing imperfections and the need for high-quality interfaces, limiting their operating speed and integration density.
Innovation Solution
A method is developed to form a superconducting region in the gate of a quantum device by lateral diffusion of metal species from the sidewalls, using a protective layer to prevent substrate diffusion, enabling improved spin control and reduced energy consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If superconducting qubit devices are used to achieve good entanglement between qubits, then entanglement quality is improved, but manufacturing variability and sensitivity to imperfections increase
Solution Approach 1:
A protective layer is introduced as an intermediary between the metal layer and the substrate. This protective layer prevents harmful diffusion of metal species into the substrate while allowing the metal to diffuse laterally into the gate to form the superconducting region, thus mediating between the need for superconductivity and the need to prevent manufacturing defects
2Reliability
If high-quality interfaces between superconducting reservoirs are required to achieve Josephson effect, then superconducting performance is improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The metal layer is deposited conformally on the sidewalls of the gate, and the protective layer automatically prevents downward diffusion into the substrate. The system self-regulates the diffusion process, eliminating the need for complex additional steps to control interface quality and prevent defects
3Use of energy by moving object
If spin qubit devices are used to reduce energy consumption and improve reproducibility, then energy efficiency is improved, but operating speed decreases
Solution Approach 1:
The device combines spin qubit architecture with a superconducting gate formed by metal diffusion. The gate dielectric and superconducting gate create a composite structure that enables spin control with superconducting advantages, achieving both low energy consumption and high operating speed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the operating speed and reduces energy consumption of quantum devices while maintaining high integration density, benefiting both electron spin and superconducting qubit technologies.
Implementation Method 1
Forming a superconducting region in the gate by lateral diffusion of the at least one metal species from the sidewalls of said gate
Implementation Method 2
said protective layer being configured to prevent diffusion (or reaction) of at least one metal species in the substrate
Data Source
AI summary
A method for producing a quantum device comprising providing a substrate having a front face and carrying at least one transistor pattern on the front face thereof, said transistor pattern comprising, in a stack a gate dielectric on the front face of the substrate, and a gate on the gate dielectric, said gate having a top and sidewalls. The method further includes forming a protective layer at the front face of the substrate, said protective layer being configured to prevent diffusion of at least one metal species in the substrate, forming a metal layer that has, as a main component, at least one metal species, at least on the sidewalls of the gate, said at least one metal species comprising at least one superconducting element, and forming a superconducting region in the gate by lateral diffusion of the at least one superconducting element from the sidewalls of said gate.