Superconducting Gate Structure for Faster, Lower-Energy Spin Qubits
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Solution Overview
Problem
Existing quantum devices, particularly superconducting qubits, suffer from high variability due to manufacturing imperfections and require a high-quality interface for the Josephson effect, leading to energy inefficiency and lower operating speeds.
Innovation Solution
A quantum device with a superconducting gate architecture featuring a recessed basal portion and a dielectric spacer beneath the top portion, allowing for improved electrostatic control and energy-efficient spin qubit operations through lateral diffusion of a superconducting region from the sidewalls of the gate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If superconducting qubit devices are used to achieve good entanglement between qubits, then entanglement quality is improved, but manufacturing variability and sensitivity to imperfections increase
Solution Approach 1:
The gate structure implements local quality by creating a recessed basal portion with different dimensions than the top portion, allowing the superconducting region to be concentrated where most needed for quantum control while maintaining overall gate functionality. This localized structural differentiation enables precise control of the quantum interface region.
Solution Approach 2:
The invention transitions from a planar gate structure to a three-dimensional structure with a recessed basal portion and overhanging top portion. This dimensional change creates additional spatial control over the superconducting region distribution, allowing optimization of the gate-dielectric-semiconductor interface without increasing overall gate footprint.
2Reliability
If a high-quality interface between superconducting reservoirs is required for the Josephson effect, then quantum device performance is improved, but manufacturing complexity and difficulty increase
Solution Approach 1:
The recessed basal portion is formed in advance before final gate assembly, pre-positioning the superconducting region to achieve optimal interface geometry. This preliminary structural preparation simplifies subsequent manufacturing steps by eliminating the need for complex post-assembly interface adjustments.
Solution Approach 2:
The gate dielectric layer serves as an intermediary between the superconducting gate and the semiconductor channel, with the recessed basal portion creating an optimized interaction zone. This intermediary structure mediates the quantum effects while providing manufacturing tolerance.
3Productivity
If spin qubit devices use standard FDSOI manufacturing methods, then integration density and reproducibility are improved, but operating speed decreases
Solution Approach 1:
The invention changes the gate dimensional parameters by creating a recessed basal portion with smaller dimensions than the top portion. This parameter modification enhances the electric field distribution and improves carrier control, directly increasing operating speed while preserving the FDSOI manufacturing process compatibility for maintaining integration density.
4Use of energy by moving object
If spin qubit devices are used to consume less energy, then energy efficiency is improved, but operating speed becomes lower compared to superconducting qubits
Solution Approach 1:
The gate structure combines superconducting materials in a composite configuration with the recessed basal portion, merging the low-energy consumption advantage of superconducting qubits with the manufacturing benefits of spin qubit architectures. This composite approach enables both energy efficiency and high operating speed by optimizing the superconducting region geometry.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances operating speed and reduces energy consumption while maintaining integration density, enabling efficient control of electron spin qubits and integration with microelectronic technologies.
Implementation Method 1
lateral diffusion of a superconducting region from the sidewalls of the gate
Implementation Method 2
They in particular require a very high quality interface between the two superconducting reservoirs to achieve a Josephson effect
Data Source
AI summary
A quantum device includes a transistor pattern carried by a substrate, the transistor pattern having, in a stack, a gate dielectric and a superconducting gate on the gate dielectric. The superconducting gate has a base, a tip, sidewalls and at least one superconducting region made of a material that has, as a main component, at least one superconducting element. The superconducting gate also includes a basal portion having a dimension, taken in a first direction of a basal plane that is smaller than a dimension of the tip of the superconducting gate. The transistor pattern further includes at least one dielectric portion made of a dielectric material in contact with the top face of the gate dielectric and the basal portion of the superconducting gate.