Multi-Superconducting Layer Integration via Hard Mask Etching
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Solution Overview
Problem
Existing methods for integrating multiple superconducting materials on a substrate face challenges due to secondary pollution, low thermal budget, and high equipment requirements, limiting their universal applicability.
Innovation Solution
A method involving the sequential deposition of superconducting material layers on a substrate, using hard masks for regional control, followed by etching treatment to achieve precise integration of multiple superconducting materials, utilizing techniques like photolithography and dry/wet etching to selectively remove materials and maintain purity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a simple organic photoresist is used for regional growth, then the process is simple, but it causes secondary pollution and has very low thermal budget
Solution Approach 1:
The patent extracts and removes the harmful organic photoresist from the process entirely, replacing it with inorganic hard masks (silicon nitride, silicon oxide) that can be deposited via PVD or CVD and removed via wet etching, thereby eliminating secondary pollution while maintaining processability
Solution Approach 2:
The patent changes the material parameters from organic photoresist to inorganic hard masks, and changes the removal mechanism from thermal decomposition to wet chemical etching, thereby eliminating pollution while improving thermal budget through higher etching selectivity and control
2Ease of manufacture
If a simple organic photoresist is used for regional growth, then the process is simple, but the thermal budget is very low
Solution Approach 1:
The patent extracts the organic photoresist and replaces it with inorganic hard masks that have high thermal stability and can withstand higher processing temperatures, thereby increasing the thermal budget while maintaining ease of manufacture through standard semiconductor fabrication processes
Solution Approach 2:
The patent changes the material composition from organic to inorganic, fundamentally altering the thermal properties and enabling higher processing temperatures and better thermal management during subsequent fabrication steps
3Manufacturing precision
If a desolventizing method is used for regional selective growth, then selective growth is achieved, but the requirements on preparation equipment are very high
Solution Approach 1:
The patent employs hard masks that are compatible with standard semiconductor fabrication equipment (PVD, CVD, wet etching tools), making the process universally applicable across existing manufacturing lines without requiring specialized or complex equipment
Solution Approach 2:
The patent changes the material system to inorganic hard masks that can be processed using conventional semiconductor manufacturing parameters and equipment, thereby achieving regional selective growth with standard rather than specialized equipment
4Manufacturing precision
If a desolventizing method is used for regional selective growth, then selective growth is achieved, but the thermal budget is very low
Solution Approach 1:
The patent extracts the organic photoresist and replaces it with inorganic hard masks that have high thermal stability, thereby increasing the thermal budget while maintaining the precision of regional selective growth through controlled wet etching processes
Solution Approach 2:
The patent fundamentally changes the material parameters from organic to inorganic, enabling higher processing temperatures and improved thermal management while maintaining precise regional selectivity through etching parameter control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient and precise integration of multiple superconducting materials on a single substrate, overcoming previous limitations and laying the foundation for advanced quantum devices and circuits.
Implementation Method 1
depositing a first superconducting material layer on a substrate, the first superconducting material layer being formed by covering a first superconducting material in a first target region range with a first hard mask
Implementation Method 2
performing etching treatment on the second hard mask and the second superconducting material to obtain a second superconducting material layer
Data Source
AI summary
A method for preparing multi-superconducting material layers includes: depositing a first superconducting material layer on a substrate, the first superconducting material layer being formed by covering a first superconducting material in a first target region range with a first hard mask in the first target region range; depositing a second superconducting material on the substrate deposited with the first superconducting material layer; covering the second superconducting material with a second hard mask; and performing etching treatment on the second hard mask and the second superconducting material to obtain a second superconducting material layer formed by covering the second superconducting material in a second target region range with the second hard mask in the second target region range.