Superconducting Through Electrode Plating With Removable Seed Layer
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Solution Overview
Problem
The formation of through electrodes using a non-superconducting material as a seed layer in electroplating methods leads to increased electrical resistance and deterioration of characteristics at low temperatures.
Innovation Solution
A method involving forming a conductive film on a substrate using a non-superconducting material, etching a through hole, and using the exposed conductive film as a seed layer for electroplating a superconducting material to form the through electrode, followed by removing the non-superconducting film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a non-superconducting material is used as a seed layer for electroplating a through electrode, then the electroplating process can be successfully performed, but the electrical resistance of the through electrode increases and characteristics deteriorate at low temperatures
Solution Approach 1:
The through electrode is segmented into two parts: a non-superconducting seed layer at the bottom for electroplating processability, and a superconducting material layer above it for low-temperature performance. This segmentation allows each part to fulfill its specific function without compromising the other.
Solution Approach 2:
The non-superconducting material is extracted and confined to only the seed layer portion, while the main body of the through electrode is made of superconducting material. This extraction ensures that the harmful non-superconducting material does not extend into regions where superconductivity is required.
2Ease of manufacture
If a non-superconducting conductive film is formed on the substrate before etching, then the seed layer for electroplating is provided, but the through electrode contains non-superconducting material that increases electrical resistance
Solution Approach 1:
The non-superconducting conductive film is formed preliminarily on the substrate before etching the through hole. This preliminary action provides a reliable seed layer for subsequent electroplating, while the film is strategically positioned to remain only at the bottom of the through hole.
Solution Approach 2:
The conductive film has different properties at different locations: it is non-superconducting at the bottom of the through hole (where it serves as seed layer) and is removed from other areas. This local quality differentiation ensures the seed layer function is achieved without contaminating the superconducting regions.
3Reliability
If the conductive film is removed after forming the through electrode, then the through electrode is made predominantly of superconducting material, but additional process steps are required
Solution Approach 1:
The non-superconducting conductive film is discarded after it has served its purpose as a seed layer for electroplating. The removal of this film after through electrode formation eliminates non-superconducting material from the final structure, ensuring pure superconducting characteristics while the film's temporary presence enables the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach suppresses the increase in electrical resistance and deterioration of characteristics by ensuring the through electrode is predominantly made of superconducting material, maintaining optimal performance at low temperatures.
Implementation Method 1
forming a through electrode in the through hole by using a superconducting material by an electroplating method using the conductive film exposed in the through hole as a seed layer
Data Source
Figure 1
Figure 2A~2C
Figure 3A~3C
AI summary
A method of manufacturing a device (100, 200, 300, 400, 410, 500, 510) includes forming a conductive film (61) on a second surface (12) of a substrate (10) having a first surface (11) and the second surface opposite to the first surface by using a non-superconducting material, forming a through hole (13) penetrating the substrate by etching the substrate from the first surface after forming the conductive film, forming a through electrode (30) in the through hole by using a superconducting material by an electroplating method using the conductive film exposed in the through hole as a seed layer, and removing the conductive film after forming the through electrode.