Superconducting Wire C-Axis Alignment via Melt Annealing
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Solution Overview
Problem
Current methods for forming superconducting wires struggle to achieve biaxial alignment of superconducting layers, which is crucial for enhancing current transport capacity and reducing power loss, particularly in high-temperature applications.
Innovation Solution
A method involving the formation of a superconducting precursor film with a composition of Re, Ba, and Cu on a substrate, followed by heating and oxygen gas exposure to create an epitaxial superconductor aligned only in the c-axis direction, utilizing specific temperature and oxygen partial pressure conditions to achieve biaxial alignment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to form superconducting wires, then the manufacturing process is simpler, but biaxial alignment of the superconducting layer cannot be achieved
Solution Approach 1:
The patent applies parameter changes by precisely controlling oxygen partial pressure (10-200 mTorr range) and temperature (774-880°C range) during the annealing process to achieve c-axis oriented epitaxial growth. By adjusting these parameters within specific ranges, the method transforms the precursor film into a superconducting layer with biaxial alignment, resolving the contradiction between manufacturing precision and process complexity.
Solution Approach 2:
The patent utilizes phase transitions during the annealing process where the precursor film undergoes structural transformation from an amorphous or disordered state to a crystalline epitaxial structure with c-axis orientation. This phase transition, driven by controlled heating and oxygen exposure, enables the formation of the desired biaxial alignment without requiring complex mechanical alignment processes.
2Reliability
If biaxial alignment is achieved through conventional methods, then current transport capacity improves, but manufacturing precision and control are insufficient
Solution Approach 1:
The patent achieves reliable c-axis oriented growth by implementing precise parameter control during annealing: oxygen partial pressure maintained at 10-200 mTorr and temperature controlled at 774-880°C. These parameter changes ensure consistent epitaxial growth and biaxial alignment, directly improving current transport capacity while maintaining high manufacturing precision through controlled atmospheric and thermal conditions.
3Manufacturing precision
If oxygen partial pressure is increased to improve superconducting layer formation, then epitaxial growth is enhanced, but required temperature range shifts
Solution Approach 1:
The patent demonstrates the interdependence of oxygen partial pressure and temperature through parameter changes. When oxygen partial pressure is adjusted within 10-200 mTorr, the corresponding c-axis growth temperature range shifts from 774-880°C. This coordinated parameter adjustment allows optimization of epitaxial growth quality while accounting for temperature variations, resolving the contradiction between growth quality and temperature control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a superconducting wire with a higher critical current density, reducing power loss and enabling applications in fields like power transmission and magnetic levitation, by ensuring the superconducting layer is biaxially aligned only in the c-axis direction.
Implementation Method 1
heating the substrate to melt the superconducting precursor film
Implementation Method 2
providing an oxygen gas having an oxygen partial pressure of about 10 mTorr to about 200 mTorr on the molten superconducting precursor film to form a superconducting layer including an epitaxial superconductor biaxially aligned only in the c-axis direction
Data Source
AI summary
Provided is a method of forming a superconducting wire, the method including forming a superconducting precursor film on a substrate, the super conducting precursor film containing Re, Ba, and Cu having a composition in which Ba is poor and Cu is rich compared to stoichiometric ReBCO(Gd1Ba2Cu3O7−y, 0≤y≤6, Re: Rare earth element), heating the substrate to melt the superconducting precursor film, providing an oxygen gas having an oxygen partial pressure of about 10 mTorr to about 200 mTorr on the molten superconducting precursor film to form a superconducting layer including an epitaxial superconductor biaxially aligned only in the c-axis direction perpendicular to the substrate, and cooling the substrate.