Superconducting Wire Reaction Suppressing Layer
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Solution Overview
Problem
The existing methods for manufacturing superconducting wire rods face challenges in achieving high crystalline orientation of oxide superconductors due to differences in thermal expansion coefficients and lattice constants between the substrate and the superconductor, leading to impurity formation and adverse effects on superconducting properties.
Innovation Solution
A superconducting wire rod is fabricated with a metal substrate, an intermediate layer containing a rare-earth element, a reaction suppressing layer of LaMnO3+δ, and an oxide superconducting layer containing Ba, where the reaction suppressing layer is thinner than the cap layer and has a cubic or orthorhombic lattice structure to prevent impurity formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a cap layer made of CeO2 or PrO2 is disposed directly below the oxide superconducting layer to achieve higher biaxial crystal orientation, then the crystalline orientation is improved, but impurities such as BaCeO3 or BaPrO3 are generated which adversely affect superconducting properties
Solution Approach 1:
A reaction suppressing layer made of LaMnO3+δ is introduced as an intermediary between the cap layer (CeO2 or PrO2) and the oxide superconducting layer (YBa2Cu3O7-δ). This intermediate layer prevents direct contact and chemical reaction between the rare-earth elements in the cap layer and Ba in the superconducting layer, thereby suppressing impurity formation while maintaining the beneficial crystalline orientation provided by the cap layer.
Solution Approach 2:
The interface structure is segmented into multiple distinct layers: the cap layer for orientation control, the reaction suppressing layer for chemical isolation, and the oxide superconducting layer for superconducting function. This segmentation allows each layer to perform its specific function independently without interfering with others, solving both the orientation and impurity problems.
2Device complexity
If the oxide superconductor is formed directly on the metal substrate to simplify the structure, then the device complexity is reduced, but differences in thermal expansion coefficients and lattice constants cause distortion or peeling-off during cooling
Solution Approach 1:
The intermediate layer (comprising the cap layer and reaction suppressing layer) acts as a mediator between the metal substrate and the oxide superconducting layer. This intermediate structure provides a gradual transition in thermal expansion coefficients and lattice constants, reducing thermal stress and preventing film distortion or peeling during the cooling process to superconducting critical temperature.
3Object-generated harmful factors
If the reaction suppressing layer is made thicker to better suppress reactions, then the impurity generation is reduced, but the manufacturing precision and critical current properties deteriorate due to excessive thickness
Solution Approach 1:
The thickness of the reaction suppressing layer is precisely controlled within the range of 10-100 nm. This optimized thickness parameter provides sufficient chemical isolation to suppress impurity formation while remaining thin enough to minimize interference with the superconducting properties and critical current of the oxide superconducting layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in a superconducting wire rod with fewer impurities, enhancing the critical current properties by suppressing reactions between the rare-earth elements and Ba, thereby improving the superconducting properties.
Implementation Method 1
a reaction suppressing layer which is formed on the intermediate layer and mainly contains LaMnO3+δ
Implementation Method 2
The oxide superconductor has electrical anisotropy such that the flow of electricity is promoted along the crystal axes a and b of the crystals itself, but the flow of electricity is impended along the crystal axis c of the crystals itself
Implementation Method 3
The oriented layer is deposited, for example, by an ion beam assisted deposition method (IBAD method)
Data Source
AI summary
Impurities in an oxide superconducting layer or at a surface of the oxide superconducting layer at an intermediate layer side are reduced. A superconducting wire rod has a configuration that includes a metal substrate 10; an intermediate layer 20 formed on the metal substrate 10 and containing a rare-earth element that reacts with Ba; a reaction suppressing layer 28 formed on the intermediate layer 20 and mainly containing LaMnO3+δ1, wherein δ1 represents an amount of non-stoichiometric oxygen; and an oxide superconducting layer 30 formed on the reaction suppressing layer 28 and mainly containing an oxide superconductor containing Ba.