Supercritical CO2 Substrate Cleaning Composition
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Solution Overview
Problem
Conventional substrate cleaning processes using organic solvents like isopropyl alcohol can cause pattern leaning and collapse in semiconductor devices with fine circuit patterns, and struggle to effectively remove nanoscale particles, leading to defects and reduced yield.
Innovation Solution
A substrate cleaning composition comprising a co-solvent, a binder, and an etching compound, such as trimethyl phosphate and hydrogen fluoride, mixed with a supercritical fluid, which is applied using a substrate treating apparatus to enhance cleaning efficiency and prevent pattern collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If organic solvent (isopropyl alcohol) is used for drying the substrate, then the cleaning process can be completed, but pattern leaning and collapse occur in fine circuit patterns
Solution Approach 1:
The patent changes the physical-chemical parameters of the drying medium by using supercritical carbon dioxide instead of conventional organic solvents. The supercritical fluid has unique properties (gas-like diffusivity, liquid-like density) that enable effective drying without causing pattern collapse, thus resolving the contradiction between cleaning effectiveness and pattern integrity
Solution Approach 2:
The patent utilizes the phase transition characteristics of carbon dioxide between supercritical and gaseous states. By controlling pressure and temperature, the CO2 transitions to a supercritical state for cleaning, then returns to gaseous state for easy removal, achieving effective drying without residual solvent that would cause pattern leaning or collapse
2Device complexity
If conventional cleaning composition is used, then the process is simple, but nanoscale particles (100 nm or less) cannot be effectively removed
Solution Approach 1:
The patent employs a composite cleaning system consisting of supercritical carbon dioxide combined with specifically selected surfactants and cleaning agents. This composite approach enhances the ability to remove nanoscale particles while maintaining process feasibility, resolving the contradiction between simplicity and effectiveness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively removes nanoscale particles and prevents pattern collapse, improving cleaning efficiency and maintaining the integrity of fine circuit patterns in semiconductor devices.
Implementation Method 1
A substrate cleaning composition comprising a co-solvent, a binder, and an etching compound, such as trimethyl phosphate and hydrogen fluoride, mixed with a supercritical fluid
Implementation Method 2
a binder comprising a compound of [chemical formula 1: O═P—(O—R)3, R: CH3—(CH2)n-1, n: a natural number]
Data Source
AI summary
Disclosed are an anhydrous substrate cleaning composition, a substrate treating method, and a substrate treating apparatus. The anhydrous substrate cleaning composition includes an etching composite that provides fluorine, a solvent that dissolves the etching composite, and a binder that is a composite including phosphorous.