Superjunction Semiconductor Device Temperature Detection Diode Width Matching
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Solution Overview
Problem
The integration of a temperature detection diode with a semiconductor device having a superjunction (SJ) structure can lead to reduced breakdown voltages due to uneven electric charge distributions, which existing techniques fail to adequately address.
Innovation Solution
A semiconductor device design that includes a drift layer with interdigitally arranged p- and n-type columns, well regions, source regions, and a temperature detection diode with a line width matching the column width, integrated with a gate insulating film and gate electrodes, ensuring no influence on the main device performance and maintaining balanced electric charges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a temperature detection diode is integrated into the semiconductor device, then temperature detection capability is improved, but breakdown voltage is reduced due to electric charge imbalance
Solution Approach 1:
The patent applies local quality by making the line width of the temperature detection diode equal to the line width of the column structure beneath it. This localized dimensional matching ensures that the electric charge distribution under the temperature detection area remains balanced, preventing breakdown voltage reduction while maintaining temperature detection functionality.
Solution Approach 2:
The patent achieves equipotentiality by designing the temperature detection diode with a line width that matches the column width, ensuring uniform electric potential distribution across the semiconductor device surface. This prevents potential differences that would cause charge imbalance and breakdown voltage degradation.
2Reliability
If the line width of the temperature detection diode is reduced to match the column width, then breakdown voltage is maintained, but manufacturing precision requirements increase
Solution Approach 1:
The patent merges the temperature detection diode structure with the existing column structure by making their line widths equal. This integration allows both structures to be formed simultaneously using the same manufacturing processes and alignment references, reducing the need for separate high-precision alignment steps while maintaining the required dimensional accuracy.
3Ease of manufacture
If the line width of the temperature detection diode is increased, then manufacturing is easier, but breakdown voltage is reduced due to charge imbalance
Solution Approach 1:
The patent identifies the line width of the temperature detection diode as a critical parameter and sets it equal to the column width. This parameter change optimizes the balance between manufacturing ease and device performance, allowing standard manufacturing processes to be used while preventing breakdown voltage reduction through proper dimensional matching.
Data Source
AI summary
A method of manufacturing a semiconductor device includes preparing a layer, including columns, the columns extend a first direction parallel to the surface of the layer, the columns are arranged at intervals, interdigitally sandwiching other columns so as to implement a superjunction structure so the columns and the other columns are side by side; forming well regions in the layer; forming source regions in the well regions; forming an insulating film on the well regions; and forming gate electrodes on the gate insulating film, the gate electrodes bridging corresponding source regions in neighboring well regions, a temperature detection diode at an area in the gate electrodes, one column has a first width in a second direction, the temperature detection diode has a second width in the second direction, and the first width equal to the second width, and the second direction is perpendicular to the first direction.