Super-Junction Gate-Source Resistor Integration for ESD Protection
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Solution Overview
Problem
Conventional super-junction power devices require additional resistors in parallel between gates and sources to prevent accidental turn-on and electrostatic damage, increasing design and manufacturing costs, and reducing versatility due to fixed resistance values.
Innovation Solution
The integration of adjustable resistors between gates and sources, allowing for on-circuit control of resistance values, simplifying circuit design, reducing manufacturing costs, and enhancing versatility by eliminating the need for external resistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional resistors are arranged in parallel between gate and source, then the super-junction power device is protected from accidental turn-on and electrostatic damage, but design and manufacturing costs increase
Solution Approach 1:
The patent merges the protection function into the device structure by forming a doped region within the drift layer that creates an internal resistive path between gate and source. This eliminates the need for external resistors while maintaining protection against accidental turn-on and electrostatic damage, thereby reducing design and manufacturing complexity
Solution Approach 2:
The patent introduces a doped region as an intermediary structure within the drift layer that provides the resistive protection function. This internal mediator replaces external resistors and integrates the protection mechanism directly into the power device structure, simplifying overall circuit design
2Reliability
If additional resistors are arranged in parallel between gate and source, then protection function is achieved, but manufacturing costs increase
Solution Approach 1:
The protection function is merged with the drift layer structure by forming a doped region within it. This integration eliminates separate resistor components and their associated packaging, mounting, and assembly processes, thereby reducing manufacturing costs while maintaining electrostatic protection
Solution Approach 2:
The drift layer structure itself provides the protection function through the internally formed doped region. The structure serves its primary function of voltage blocking while simultaneously providing electrostatic protection, eliminating the need for separate protection components and reducing manufacturing complexity
3Reliability
If fixed resistance value resistors are used, then circuit protection is provided, but versatility of the circuit is reduced
Solution Approach 1:
The patent creates an adjustable resistive path by controlling the doping concentration and geometry of the doped region in the drift layer. This allows the resistance value to be tuned during device fabrication to match different circuit requirements, providing versatility while maintaining protection functionality
Solution Approach 2:
The resistance value is adjusted by changing the doping parameters (concentration, depth, area) of the doped region formed in the drift layer. This parameter adjustment during manufacturing allows customization for different applications without requiring external resistors, thereby maintaining versatility
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves integration, stability, and cost-effectiveness of super-junction power devices by allowing adjustable resistance values, simplifying circuit design, and accommodating various application requirements without the need for external resistors.
Implementation Method 1
a step S1: depositing, by performing chemical vapor deposition, an intrinsic epitaxial layer on an upper surface of a silicon substrate
Implementation Method 2
doping pentavalent elements, by ion implantation, into the intrinsic epitaxial layer
Implementation Method 3
a step S5: growing a gate oxide layer by performing a thermal oxidation step
Data Source
AI summary
A method of manufacturing a super-junction power device having adjustable resistors connected in parallel between a gate and a source; and the super-junction power device obtained by performing the method are provided. The method includes: preparing a unit cell and the adjustable resistors connected in parallel between the gate and the source of the super-junction power device; preparing contact holes; preparing metal wires; and preparing a passivation layer.