Superjunction Semiconductor Structure for Low On-Resistance Switching
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Solution Overview
Problem
Power control semiconductor devices face challenges in reducing on-resistance and improving switching speed while maintaining current withstand capabilities.
Innovation Solution
A semiconductor device with a super junction structure is designed, featuring multiple semiconductor layers and a control electrode configuration that includes a fifth semiconductor layer connecting adjacent fourth semiconductor layers, enhancing hole rejection and avalanche resistance, and integrating a Schottky diode to prevent characteristic degradation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor structure is used, then manufacturing is simpler, but on-resistance is higher and switching speed is slower
Solution Approach 1:
The semiconductor device is divided into multiple functional layers including first to fifth semiconductor layers with different conductive types, control electrodes, and insulating films. Each layer serves a specific function in reducing on-resistance while maintaining manufacturability through systematic segmentation of the device structure.
Solution Approach 2:
Different regions of the semiconductor device have different conductive types and doping concentrations. The first semiconductor layer has first conductive type, while the second, fourth, and fifth layers have second conductive type, creating local quality variations that reduce overall on-resistance through optimized charge distribution.
2Speed
If conventional semiconductor structure is used, then device structure is simpler, but switching speed is slower
Solution Approach 1:
The control electrodes are configured to dynamically control the conductivity of different semiconductor regions. The control electrodes face different semiconductor layers (second, fourth, and fifth layers) with different conductive types, enabling dynamic switching between ON and OFF states by applying appropriate voltages to enhance switching speed.
Solution Approach 2:
The invention introduces a vertical stacking dimension with multiple semiconductor layers arranged in sequence, rather than using a planar structure. This three-dimensional arrangement allows multiple control electrodes to operate simultaneously on different layers, increasing switching speed through parallel operation.
3Strength
If conventional semiconductor structure is used, then current withstand capability is limited, but device structure is simpler
Solution Approach 1:
The semiconductor device uses a composite structure with alternating layers of different conductive types (n-type and p-type semiconductor layers). This composite configuration creates multiple junctions that enhance current withstand capability by distributing electrical stress across different material interfaces and regions.
Solution Approach 2:
The fifth semiconductor layer of second conductive type is provided between the first semiconductor layer and the second semiconductor layer, positioned between adjacent fourth semiconductor layers. This layer acts as a cushioning structure that prevents characteristic degradation and enhances avalanche resistance before high voltage stress occurs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces on-resistance, improves switching speed, and increases avalanche resistance, enabling better current handling and surge protection.
Implementation Method 1
The control electrode is provided between the second electrode and each of the fourth semiconductor layers. The control electrode faces the second semiconductor layer via a first insulating film.
Implementation Method 2
integrating a Schottky diode to prevent characteristic degradation... increases avalanche resistance
Data Source
Figure 1
Figure 2A~2B
Figure 3A~3B
AI summary
A semiconductor device (1, 2, 3) includes first, second and control electrodes (20, 30, 40), and a semiconductor part (10) between the first and second electrode (20, 30). The semiconductor part (10) includes first and third layers (11, 15) of a first conductive type, and second, fourth and fifth layers (13, 17, 19) of a second conductive type. The first layer (11) extends between the first and second electrodes (20, 30). The second layer (13) is provided between the first layer (11) and the second electrode (30). The third layer (15) is partially provided on the second layer (13) between the second layer (13) and the second electrode (30). A first fourth layer (17) and a second fourth layer (17) are provided in the first layer (11). The fifth layer (19) is provided between the first layer (11) and the second layer (13). The fifth layer (19) is partially provided on the first layer (11) between the first fourth layer (17) and the second fourth layer (17). The control electrode (40) is provided between the second electrode (30) and each of the fourth layers (17).