Superjunction Transistor Bidirectional Gate Control
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Solution Overview
Problem
Superjunction transistors face challenges in maintaining high breakdown voltage and low on-resistance due to asymmetry, which affects their blocking capabilities and performance in various applications.
Innovation Solution
A superjunction apparatus with a substrate having laterally separated end portions, alternating regions of first and second semiconductor materials with different doping types, and multiple gate electrodes to bidirectionally control current flow by applying voltages, creating inversion layers and blocking high voltages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If asymmetry is introduced in superjunction transistor structure, then breakdown voltage is improved, but blocking capability and performance deteriorate
Solution Approach 1:
The patent applies asymmetry principle by introducing a pinned gate electrode that is electrically connected to only one of the source or drain electrodes, creating an asymmetric structure. This asymmetric configuration enables the transistor to achieve high breakdown voltage while maintaining symmetric bidirectional blocking capability, as the pinned gate can independently control the depletion regions to block high voltages in both directions.
2Strength
If superjunction structure is used, then both high breakdown voltage and low on-resistance are achieved, but asymmetry negatively impacts performance
Solution Approach 1:
The patent applies universality principle by designing the pinned gate electrode to perform multiple functions: it controls the depletion region to block high voltages, enables bidirectional current blocking, and maintains low on-resistance during conduction. This multi-functional design allows the asymmetric structure to achieve symmetric performance characteristics in both blocking and conducting states.
3Reliability
If symmetrical control is achieved, then blocking capability is improved, but device complexity increases
Solution Approach 1:
The patent applies segmentation principle by dividing the gate control into two independent parts: a conventional gate electrode and a pinned gate electrode. The pinned gate electrode is segmented to be electrically connected to only one terminal (source or drain), allowing independent control of depletion regions. This segmentation enables symmetrical bidirectional blocking capability while maintaining relatively simple device structure compared to fully symmetric dual-gate configurations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves symmetrical control of current flow and high breakdown voltage while maintaining low on-resistance, effectively addressing the asymmetry issues in superjunction transistors.
Implementation Method 1
applying voltages to the first gate electrode and the second gate electrode to bidirectionally control current flow between the first electrode and the second electrode
Implementation Method 2
blocking high voltages
Data Source
AI summary
Aspects of the present disclosure are directed toward apparatuses, methods, and systems that include at least two regions of a first semiconductor material and at least two regions of second semiconductor material that are alternatively interleaved. Additionally, the apparatuses, methods, and systems include a first electrode and a second electrode that can operate both as a source and drain. The apparatuses, methods, and systems also include a first gate electrode having multiple portions on the first semiconductor material and a second gate electrode having multiple portions on the second semiconductor material that bidirectionally control current flow between the first electrode and the second electrode.