Superlattice Source-Drain Structure for Dopant Diffusion Blocking
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face reliability issues due to dopant diffusion during high-temperature processes, which affects the integrity of source/drain patterns and well regions, leading to variance in dopant densities and reduced device performance.
Innovation Solution
Incorporating a superlattice pattern with alternating semiconductor layers and blocker-containing layers, including oxygen, carbon, fluorine, or nitrogen, to prevent dopant migration by blocking diffusion through interstitial spaces, thereby enhancing the reliability of semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high-temperature processes are used for semiconductor manufacturing, then manufacturing productivity is improved, but dopant diffusion occurs leading to reduced reliability
Solution Approach 1:
A superlattice pattern comprising alternating semiconductor layers and blocker-containing layers is introduced as an intermediary structure between source/drain regions and well regions. The blocker-containing layers (including oxygen, carbon, fluorine, or nitrogen) act as diffusion barriers that prevent dopant migration during high-temperature processes, thereby maintaining device reliability while enabling high-temperature manufacturing
Solution Approach 2:
The superlattice pattern utilizes composite material structure with alternating layers of semiconductor material and blocker-containing material. This composite structure combines the beneficial properties of both materials: the semiconductor layers maintain electrical functionality while the blocker-containing layers provide diffusion barrier properties, solving the contradiction between manufacturing temperature and dopant diffusion control
2Reliability
If dopant diffusion is prevented using traditional barrier methods, then reliability is improved, but device complexity increases
Solution Approach 1:
The barrier structure is segmented into multiple thin alternating layers of semiconductor and blocker-containing materials, forming a superlattice pattern. This segmentation approach provides superior diffusion blocking compared to traditional single-layer barriers, while the periodic structure maintains compatibility with existing semiconductor device architectures, minimizing additional complexity
Solution Approach 2:
The superlattice pattern utilizes controlled variation in layer thickness and composition ratios to optimize diffusion blocking performance. By adjusting the thickness of semiconductor layers and blocker-containing layers, the diffusion barrier effectiveness can be tuned without significantly increasing device complexity, maintaining dopant concentration stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The superlattice pattern effectively impedes dopant migration, improving the reliability and performance of semiconductor devices by maintaining desired dopant concentrations and reducing the need for well regions, thus enhancing overall device stability.
Implementation Method 1
a first superlattice pattern on the first active pattern... The first superlattice pattern includes at least one first semiconductor layer and at least one first blocker-containing layer, and the first blocker-containing layer includes at least one of oxygen, carbon, fluorine and nitrogen
Data Source
AI summary
A semiconductor device includes; a substrate including a first region and a second region, a first active pattern extending upward from the first region, a first superlattice pattern on the first active pattern, a first active fin centrally disposed on the first active pattern, a first gate electrode disposed on the first active fin, and first source/drain patterns disposed on opposing sides of the first active fin and on the first active pattern. The first superlattice pattern includes at least one first semiconductor layer and at least one first blocker-containing layer, and the first blocker-containing layer includes at least one of oxygen, carbon, fluorine and nitrogen.