Superlattice Resistance Memory Device for Low Current Operation

The patent changes the physical and chemical parameters of the memory layer by using a superlattice structure with alternating Sb2Te3 and GeTe layers. This superlattice structure undergoes phase transitions between crystalline and amorphous states, dramatically changing electrical resistance. The specific parameters changed include crystal structure, phase state, and electrical conductivity, enabling low-current operation while maintaining reliable memory functionality

The patent exploits phase transitions of the superlattice film between crystalline and amorphous states to achieve resistance changes. By applying heat or electrical current, the material transitions between phases, creating distinct high-resistance and low-resistance states that represent binary data. This phase transition mechanism enables efficient current control and reliable memory storage with lower current consumption

The patent segments the memory layer into a superlattice structure with multiple alternating layers of Sb2Te3 and GeTe. This segmentation into thin alternating layers creates the necessary phase transition properties while maintaining compatibility with existing manufacturing processes. The segmented structure can be deposited layer-by-layer using standard sputtering or molecular beam epitaxy techniques

The patent uses a composite superlattice material combining Sb2Te3 and GeTe in alternating layers. This composite structure leverages the complementary properties of both materials to achieve superior phase transition characteristics and resistance change ratios. The composite nature allows tuning of physical properties by adjusting layer thickness ratios while remaining manufacturable with existing thin-film deposition technologies