Substrate Support Chuck Cooling for Uniform Plasma Processing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing plasma processing apparatuses face challenges in achieving uniform temperature control during semiconductor manufacturing, leading to irregular plasma processing due to thermal loads from ion bombardment, which affects the uniformity of the plasma processing process.
Innovation Solution
A plasma processing apparatus with a substrate support chuck featuring symmetrical upper and lower cooling channels, where the support chuck temperature controller adjusts the flow rate, flow direction, and temperature of coolants to uniformly control the temperature of the substrate support chuck, thereby managing thermal loads effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a single cooling channel is used in the substrate support chuck, then the device complexity is reduced, but the temperature uniformity across the substrate cannot be maintained due to thermal loads from ion bombardment
Solution Approach 1:
The cooling channel is divided into multiple segments (first cooling channel and second cooling channel) positioned at different locations within the substrate support chuck. Each segment can independently receive coolant, allowing differentiated cooling zones to be created across the substrate processing area, thereby achieving uniform temperature distribution while managing device complexity through modular channel design
2Temperature
If coolant flow rate is increased to remove thermal loads more effectively, then temperature control improves, but energy consumption and system complexity increase
Solution Approach 1:
Different coolant flow rates are supplied to different cooling channels based on local thermal load requirements. The first cooling channel receives a first coolant flow rate while the second cooling channel receives a second coolant flow rate, allowing optimized energy consumption by matching coolant supply to actual cooling needs at each location rather than uniformly increasing flow throughout the system
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves improved uniformity in the plasma processing process by effectively removing thermal loads and maintaining a uniform temperature profile across the substrate support chuck, enhancing the precision and consistency of semiconductor manufacturing.
Implementation Method 1
the support chuck temperature controller is configured to supply a first coolant to the upper cooling channel and to supply a second coolant to the lower cooling channel
Data Source
AI summary
A plasma processing apparatus includes a process chamber, a substrate support chuck configured to support a substrate in the process chamber, the substrate support chuck including an upper cooling channel and a lower cooling channel that are symmetrically separated from each other, and a support chuck temperature controller configured to supply a first coolant to the upper cooling channel and to supply a second coolant to the lower cooling channel.