Support Frame Structure for Warpage-Resistant Die Stacking
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Solution Overview
Problem
Existing semiconductor device stacking methods face challenges with structural support, heat dissipation, and warpage due to the limited capabilities of conductive vias and encapsulants.
Innovation Solution
The use of a support frame with interconnected horizontal and vertical support structures provides structural support, reduces warpage, and enhances heat dissipation for stacked semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conductive vias and encapsulant are used for structural support in semiconductor die stacking, then vertical electrical interconnect is achieved, but structural support capability is limited and warpage occurs
Solution Approach 1:
A support frame is introduced as an intermediary structural element between the substrate and stacked semiconductor dies. The support frame provides enhanced mechanical support and reduces warpage, while the conductive vias and encapsulant continue to provide vertical electrical interconnect functionality. This mediator approach allows both structural support and electrical connectivity requirements to be satisfied simultaneously.
Solution Approach 2:
The support frame is constructed using composite materials that combine high structural strength with thermal conductivity. This allows the support frame to provide both mechanical support (reducing warpage) and heat dissipation functionality, addressing multiple requirements simultaneously without compromising electrical interconnect capabilities.
2Power
If conductive vias and encapsulant are used for vertical electrical interconnect, then electrical functionality is achieved, but heat dissipation capability is poor
Solution Approach 1:
The support frame is designed to perform multiple functions simultaneously: providing structural support, enabling heat dissipation through thermally conductive materials, and offering mechanical stability. This multi-functional approach allows the system to maintain electrical interconnect capability while adding superior heat dissipation that the original conductive vias and encapsulant could not provide.
Solution Approach 2:
The support frame introduces new thermal parameters (thermal conductivity, heat dissipation pathways) that were absent or insufficient in the original conductive via and encapsulant structure. By changing the thermal parameters through the support frame, the system achieves both electrical functionality and improved heat dissipation.
3Productivity
If more semiconductor devices are vertically stacked to increase electrical functionality, then footprint is reduced, but structural support requirements increase
Solution Approach 1:
The support frame is installed before stacking the semiconductor dies, providing a pre-established structural foundation. This preliminary action ensures that when multiple dies are stacked, the structural support is already in place to handle the increased weight and mechanical stresses, enabling higher device stacking without compromising structural integrity.
Data Source
AI summary
A semiconductor device has a first substrate and a first electrical component disposed over the first substrate. A first support frame is disposed over the first substrate. The first support frame has a horizontal support channel extending across the first substrate and a vertical support brace extending from the horizontal support channel to the first substrate. The first support frame can have a vertical shielding partition extending from the horizontal support channel to the first substrate. An encapsulant is deposited over the first electrical component and first substrate and around the first support frame. A second electrical component is disposed over the first electrical component. A second substrate is disposed over the first support frame. A second electrical component is disposed over the second substrate. A third substrate is disposed over the second substrate. A second support frame is disposed over the second substrate.